US38024-BAG1 Renesas Electronics America, US38024-BAG1 Datasheet - Page 542

• Manufacturer Part Number: US38024-BAG1
• Description: DEV EVALUATION KIT H8/38024
• Manufacturer: Renesas Electronics America
• Series: H8®r
• Type: MCUr

Specifications of US38024-BAG1

• Contents: 2G (Second-generation) Evaluation Board, HEW debugger support, Cable and CD-ROM
• For Use With/related Products: H8/38024
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant

Section 16 Electrical Characteristics
Notes: 1. Set the times according to the program/erase algorithms.
Rev. 8.00 Mar. 09, 2010 Page 520 of 658
REJ09B0042-0800
Item
Erase
2. Programming time per 128 bytes (Shows the total period for which the P bit in FLMCR1
3. Block erase time (Shows the total period for which the E bit in FLMCR1 is set. It does
4. Maximum programming time (t
5. The maximum number of writes (N) should be set according to the actual set value of
6. Maximum erase time (t
7. The maximum number of erases (N) should be set according to the actual set value of z
8. This minimum value guarantees all characteristics after reprogramming (the guaranteed
9. Reference value when the temperature is 25°C (normally reprogramming will be
10. This is a data retain characteristic when reprogramming is performed within the
t
The wait time after P-bit setting (z1 and z2) should be alternated according to the
t
is set. It does not include the programming verification time.)
not include the erase verification time.)
z1, z2, and z3 to allow programming within the maximum programming time (t
number of writes (n) as follows:
1 ≤ n ≤ 6
7 ≤ n ≤ 1000
to allow erasing within the maximum erase time (t
range is from 1 to the minimum value).
performed by this count).
specification range including this minimum value.
P
E
(max) = Wait time after P-bit setting (z) × maximum number of writes (N)
(max) = Wait time after E-bit setting (z) × maximum erase count (N)
Wait time after
SWE-bit setting *
Wait time after
ESU-bit setting *
Wait time after
E-bit setting *
Wait time after
E-bit clear *
Wait time after
ESU-bit clear *
Wait time after
EV-bit setting *
Wait time after
dummy write *
Wait time after
EV-bit clear *
Wait time after
SWE-bit clear *
Maximum erase
count *
1
*
6
*
7
1
1
1
z1 = 30 µs
z2 = 200 µs
*
1
1
1
6
1
1
1
Symbol
x
y
z
α
β
γ
ε
η
θ
N
E
(max))
P
(max))
Min
1
100
10
10
10
20
2
4
100
—
Values
Typ
—
—
—
—
—
—
—
—
—
—
E
Max
—
—
100
—
—
—
—
—
—
120
(max)).
Unit
µs
µs
ms
µs
µs
µs
µs
µs
µs
times
Test
Conditions
P
(max)).