US38024-BAG1 Renesas Electronics America, US38024-BAG1 Datasheet - Page 504

• Manufacturer Part Number: US38024-BAG1
• Description: DEV EVALUATION KIT H8/38024
• Manufacturer: Renesas Electronics America
• Series: H8®r
• Type: MCUr

Specifications of US38024-BAG1

• Contents: 2G (Second-generation) Evaluation Board, HEW debugger support, Cable and CD-ROM
• For Use With/related Products: H8/38024
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant

Section 16 Electrical Characteristics
Notes: 1.
16.4.7
Table 16.14 Power Supply Characteristics
Unless otherwise indicated, V
Item
Power supply startup voltage
Power supply startup slope
Notes: 1. This LSI may not start normally when it starts with the condition beyond specification
Rev. 8.00 Mar. 09, 2010 Page 482 of 658
REJ09B0042-0800
2.
3.
4.
5.
6.
7.
8.
9.
10. Data retention characteristics within the range indicated in the specifications, including
11. Applies to an operating voltage range when reading data of 3.0 to 3.6 V.
12. Applies to an operating voltage range when reading data of 2.7 to 3.6 V.
2. Applies to the F-ZTAT version.
Power Supply Characteristics
shown in above (Refer to figure 16.1 for power supply voltage startup time.).
Make the time settings in accordance with the program/erase algorithms.
The programming time for 128 bytes. (Indicates the total time for which the P bit in
flash memory control register 1 (FLMCR1) is set. The program-verify time is not
included.)
The time required to erase one block. (Indicates the time for which the E bit in flash
memory control register 1 (FLMCR1) is set. The erase-verify time is not included.)
Programming time maximum value (t
maximum number of writes (N)
Set the maximum number of writes (N) according to the actual set values of z1, z2,
and z3, so that it does not exceed the programming time maximum value (t
The wait time after P bit setting (z1, z2) should be changed as follows according to the
value of the number of writes (n).
Number of writes (n)
Erase time maximum value (t
number of erases (N)
Set the maximum number of erases (N) according to the actual set value of (z), so that
it does not exceed the erase time maximum value (t
The minimum number of times all characteristics are guaranteed following
reprogramming. (The guarantee covers the range from 1 to the minimum value.)
Reference value at 25°C. (Guideline showing number of reprogrammings over which
functioning will be retained under normal circumstances.)
the minimum value for reprogrammings.
1 ≤ n ≤ 6
7 ≤ n ≤ 1000
V
SV
Symbol
CCSTART
CC
CC
z1 = 30 µs
z2 = 200 µs
= 2.7 V to 3.6 V, AV
Applicable
Pins
V
V
CC
CC
E
(max)) = wait time after E bit setting (z) × maximum
P
Test
Condition
(MAX)) = wait time after P bit setting (z) ×
CC
= 2.7 V to 3.6 V, V
Min
0
0.05
E
(max)).
Values
Typ
—
—
SS
Max
0.1
—
= AV
Unit
V
V/ms
SS
= 0.0 V
P
(MAX)).
Notes
*
1
*
2