ATEVK1105 Atmel, ATEVK1105 Datasheet - Page 417

• Manufacturer Part Number: ATEVK1105
• Description: KIT EVAL FOR AT32UC3A0
• Manufacturer: Atmel
• Series: AVR®32r
• Type: MCUr

Specifications of ATEVK1105

• Contents: Evaluation Board, Software and Documentation
• Processor To Be Evaluated: AT32UC3A0512
• Processor Series: AVR
• Data Bus Width: 32 bit
• Interface Type: USART, TWI, USB, SPI, Ethernet
• Operating Supply Voltage: 3.3 V
• Silicon Manufacturer: Atmel
• Core Architecture: AVR
• Core Sub-architecture: AVR UC3
• Silicon Core Number: AT32UC3A0512
• Silicon Family Name: AVR
• Kit Contents: Board CD Docs
• Rohs Compliant: Yes
• For Use With/related Products: AT32UC3A0
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

28.7
28.7.1
Figure 28-5. Write Burst, 32-bit SDRAM Access
SDRAMC_A[12:0]
28.7.2
32058J–AVR32–04/11
D[31:0]
SDWE
SDCS
SDCK
Functional Description
RAS
CAS
SDRAM Controller Write Cycle
SDRAM Controller Read Cycle
Row n
The SDRAM Controller allows burst access or single access. In both cases, the SDRAM control-
ler keeps track of the active row in each bank, thus maximizing performance. To initiate a burst
access, the SDRAM Controller uses the transfer type signal provided by the master requesting
the access. If the next access is a sequential write access, writing to the SDRAM device is car-
ried out. If the next access is a write-sequential access, but the current access is to a boundary
page, or if the next access is in another row, then the SDRAM Controller generates a precharge
command, activates the new row and initiates a write command. To comply with SDRAM timing
parameters, additional clock cycles are inserted between precharge/active (t
active/write (t
Configuration Register” on page
The SDRAM Controller allows burst access, incremental burst of unspecified length or single
access. In all cases, the SDRAM Controller keeps track of the active row in each bank, thus
maximizing performance of the SDRAM. If row and bank addresses do not match the previous
row/bank address, then the SDRAM controller automatically generates a precharge command,
activates the new row and starts the read command. To comply with the SDRAM timing param-
eters, additional clock cycles on SDCK are inserted between precharge and active commands
(t
uration register of the SDRAM Controller. After a read command, additional wait states are
generated to comply with the CAS latency (1, 2 or 3 clock delays specified in the configuration
register).
RP
) and between active and read command (t
t
RCD
= 3
col a
RCD
Dna
) commands. For definition of these timing parameters, refer to the
col b
Dnb
col c
Dnc
427. This is described in
col d
Dnd
col e
Dne
RCD
col f
Dnf
). These two parameters are set in the config-
col g
Dng
Figure 28-5
col h
Dnh
col i
Dni
below.
col j
AT32UC3A
Dnj
RP
) commands and
col k
Dnk
”SDRAMC
col l
Dnl
417