MC68HC916Y3CFT16 Freescale Semiconductor, MC68HC916Y3CFT16 Datasheet - Page 413

• Manufacturer Part Number: MC68HC916Y3CFT16
• Description: IC MCU 96K FLASH 16MHZ 160-QFP
• Manufacturer: Freescale Semiconductor
• Series: HC16r

Specifications of MC68HC916Y3CFT16

• Core Processor: CPU16
• Core Size: 16-Bit
• Speed: 16MHz
• Connectivity: EBI/EMI, SCI, SPI
• Peripherals: POR, PWM, WDT
• Number Of I /o: 60
• Program Memory Size: 96KB (96K x 8)
• Program Memory Type: FLASH
• Ram Size: 2K x 8
• Voltage - Supply (vcc/vdd): 4.5 V ~ 5.5 V
• Data Converters: A/D 8x10b
• Oscillator Type: External
• Operating Temperature: -40°C ~ 85°C
• Package / Case: 160-QFP
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Eeprom Size: -

D.5.4 Flash EEPROM Control Register
VFPE — Verify Program/Erase
ERAS — Erase Control
MC68HC16Y3/916Y3
USER’S MANUAL
FEE2BAL — Flash EEPROM Base Address Register Low 2
FEE3BAL — Flash EEPROM Base Address Register Low 3
FEE1CTL — Flash EEPROM Control Register 1
FEE2CTL — Flash EEPROM Control Register 2
FEE3CTL — Flash EEPROM Control Register 3
15
15
0
0
0
0
The base address high registers (FEE1BAH, FEE2BAH, FEE3BAH) contain the 8
high-order bits of the array base address; the base address low registers (FEE1BAL,
FEE2BAL, FEE3BAL) contain the active low-order bits of the array base address. Dur-
ing reset, both FEExBAH and FEExBAL take on default values programmed into as-
sociated shadow registers. After reset, if LOCK = 0 and STOP = 1, software can write
to FEExBAH and FEExBAL to relocate the array.
The FEExCTL register (FEE1CTL, FEE2CTL,FEE3CTL) controls programming and
erasure of the arrays. FEExCTL is accessible in supervisor mode only.
The VFPE bit invokes a special program-verify circuit. During programming sequenc-
es (ERAS = 0), VFPE is used in conjunction with the LAT bit to determine when pro-
gramming of a location is complete. If VFPE and LAT are both set, a bit-wise
exclusive-OR of the latched data with the data in the location being programmed oc-
curs when any valid FLASH location is read. If the location is completely programmed,
a value of zero is read. Any other value indicates that the location is not fully pro-
grammed. When VFPE is cleared, normal reads of valid FLASH locations occur. The
value of VFPE cannot be changed while ENPE = 1.
The ERAS bit configures the array for either programming or erasure. Setting ERAS
causes all locations in the array and all control bits in the control block to be configured
for erasure at the same time.
RESET:
RESET:
0 = Normal read cycles.
1 = Invoke program verify circuit.
0 = Flash EEPROM configured for programming
1 = Flash EEPROM configured for erasure
14
14
0
0
0
0
13
13
0
0
0
0
12
12
0
0
0
0
11
11
0
0
0
0
10
10
0
0
0
0
9
0
0
9
0
0
8
0
0
8
0
0
7
0
0
7
0
0
6
0
0
6
0
0
5
0
0
5
0
0
4
0
0
4
0
0
VFPE
3
0
0
3
0
ERAS
2
0
0
2
0
MOTOROLA
$YFF826
$YFF846
$YFF808
$YFF828
$YFF848
LAT
1
0
0
1
0
ENPE
D-35
0
0
0
0
0