D13007VX13V Renesas Electronics America, D13007VX13V Datasheet - Page 181

• Manufacturer Part Number: D13007VX13V
• Description: MCU 3V 0K 100-TQFP
• Manufacturer: Renesas Electronics America
• Series: H8® H8/300Hr

Specifications of D13007VX13V

• Core Processor: H8/300H
• Core Size: 16-Bit
• Speed: 13MHz
• Connectivity: SCI, SmartCard
• Peripherals: DMA, PWM, WDT
• Number Of I /o: 35
• Program Memory Type: ROMless
• Ram Size: 4K x 8
• Voltage - Supply (vcc/vdd): 2.7 V ~ 5.5 V
• Data Converters: A/D 8x10b; D/A 2x8b
• Oscillator Type: Internal
• Operating Temperature: -20°C ~ 75°C
• Package / Case: 100-TQFP, 100-VQFP
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Eeprom Size: -
• Program Memory Size: -

6.5.7
In the H8/3006 and H8/3007, provision is made for the DRAM RAS precharge time by always
inserting one RAS precharge state (T
two T
set according to the DRAM connected and the operating frequency of the H8/3006 and H8/3007
chip. Figure 6.17 shows the timing when two T
When the TCP bit is set to 1, two T
Read access
Write access
p
Note: n = 2 to 5
states by setting the TPC bit to 1 in DRCRB. The optimum number of T
Precharge State Control
Figure 6.17 Timing with Two Precharge States (CSEL = 0 in DRCRB)
(UCAS /LCAS)
(UCAS /LCAS)
PB4 /PB5
PB4 /PB5
CSn (RAS)
RD(WE)
D
RD(WE)
D
A
15
23
15 to
to D
to A
AS
φ
D
0
0
0
p
states are also used for CAS-before-RAS refresh cycles.
p
) when DRAM space is accessed. This can be changed to
T
p1
p
states are inserted.
T
p2
Rev.5.00 Sep. 12, 2007 Page 151 of 764
High
High
Row
Tr
Column
T
c1
p
REJ09B0396-0500
cycles should be
6. Bus Controller
T
c2