D13007VX13V Renesas Electronics America, D13007VX13V Datasheet - Page 179

MCU 3V 0K 100-TQFP

D13007VX13V

Manufacturer Part Number
D13007VX13V
Description
MCU 3V 0K 100-TQFP
Manufacturer
Renesas Electronics America
Series
H8® H8/300Hr
Datasheets

Specifications of D13007VX13V

Core Processor
H8/300H
Core Size
16-Bit
Speed
13MHz
Connectivity
SCI, SmartCard
Peripherals
DMA, PWM, WDT
Number Of I /o
35
Program Memory Type
ROMless
Ram Size
4K x 8
Voltage - Supply (vcc/vdd)
2.7 V ~ 5.5 V
Data Converters
A/D 8x10b; D/A 2x8b
Oscillator Type
Internal
Operating Temperature
-20°C ~ 75°C
Package / Case
100-TQFP, 100-VQFP
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Eeprom Size
-
Program Memory Size
-
6.5.5
Table 6.7 shows the pins used for DRAM interfacing and their functions.
Table 6.7
Pin
PB4
PB5
HWR
LWR
CS
CS
CS
CS
RD
P80
A
D
Note:
6.5.6
Figure 6.16 shows the basic access timing for DRAM space. The basic DRAM access timing is
four states: one precharge cycle (T
address output cycle (T
ASTCR control only enabling or disabling of wait insertion between T
the number of access states. When the corresponding bit in ASTCR is cleared to 0, wait states
cannot be inserted between T
12
15
2
3
4
5
to A
to D
0
0
* Fixed high in a read access.
With DRAM
Designated Name
UCAS
LCAS
UCAS
LCAS
RAS
RAS
RAS
RAS
WE
RFSH
A
D
Pins Used for DRAM Interface
Basic Timing
12
15
to A
to D
DRAM Interface Pins
2
3
4
5
0
0
c1
Upper column
address strobe
Lower column
address strobe
Upper column
address strobe
Lower column
address strobe
Row address
strobe 2
Row address
strobe 3
Row address
strobe 4
Row address
strobe 5
Write enable
Refresh
Address
Data
, T
c2
) states. Unlike the basic bus interface, the corresponding bits in
c1
and T
p
) state, one row address output cycle (T
c2
in the DRAM access cycle.
I/O
Output
Output
Output
Output
Output
Output
Output
Output
Output
Output
Output
I/O
Function
Upper column address strobe for DRAM
space access (when CSEL = 0 in DRCRB)
Lower column address strobe for DRAM
space access (when CSEL = 0 in DRCRB)
Upper column address strobe for DRAM
space access (when CSEL = 1 in DRCRB)
Lower column address strobe for DRAM
space access (when CSEL = 1 in DRCRB)
Row address strobe for DRAM space access
Row address strobe for DRAM space access
Row address strobe for DRAM space access
Row address strobe for DRAM space access
Write enable for DRAM space write access*
Goes low in refresh cycle
Row address/column address multiplexed
output
Data input/output pins
Rev.5.00 Sep. 12, 2007 Page 149 of 764
c1
and T
r
) state, and two column
c2
, and do not affect
REJ09B0396-0500
6. Bus Controller

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