DF2339VFC25V Renesas Electronics America, DF2339VFC25V Datasheet - Page 874
![IC H8S/2300 MCU FLASH 144QFP](/photos/12/22/122258/df2339vfc25v_sml.jpg)
DF2339VFC25V
Manufacturer Part Number
DF2339VFC25V
Description
IC H8S/2300 MCU FLASH 144QFP
Manufacturer
Renesas Electronics America
Series
H8® H8S/2300r
Datasheets
1.HEWH8E10A.pdf
(19 pages)
2.D12312SVTE25V.pdf
(341 pages)
3.DF2338VFC25V.pdf
(1246 pages)
Specifications of DF2339VFC25V
Core Processor
H8S/2000
Core Size
16-Bit
Speed
25MHz
Connectivity
SCI, SmartCard
Peripherals
DMA, POR, PWM, WDT
Number Of I /o
106
Program Memory Size
384KB (384K x 8)
Program Memory Type
FLASH
Ram Size
32K x 8
Voltage - Supply (vcc/vdd)
3 V ~ 3.6 V
Data Converters
A/D 12x10b; D/A 4x8b
Oscillator Type
Internal
Operating Temperature
-20°C ~ 75°C
Package / Case
144-QFP
For Use With
EDK2329 - DEV EVALUATION KIT H8S/2329
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Eeprom Size
-
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
DF2339VFC25V
Manufacturer:
Renesas Electronics America
Quantity:
10 000
- Current page: 874 of 1246
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The following points must be observed concerning FWE application and disconnection to prevent
unintentional programming or erasing of flash memory:
• Apply FWE when the V
• Apply FWE when oscillation has stabilized (after the elapse of the oscillation stabilization
• In boot mode, apply and disconnect FWE during a reset.
• In user program mode, FWE can be switched between high and low level regardless of the
• Do not apply FWE if program runaway has occurred.
• Disconnect FWE only when the SWE, ESU, PSU, EV, PV, P, and E bits in FLMCR1 are
Do not apply a constant high level to the FWE pin: Apply a high level to the FWE pin only
when programming or erasing flash memory. A system configuration in which a high level is
constantly applied to the FWE pin should be avoided. Also, while a high level is applied to the
FWE pin, the watchdog timer should be activated to prevent overprogramming or overerasing due
to program runaway, etc.
Use the recommended algorithm when programming and erasing flash memory: The
recommended algorithm enables programming and erasing to be carried out without subjecting the
device to voltage stress or sacrificing program data reliability. When setting the P or E bit in
FLMCR1, the watchdog timer should be set beforehand as a precaution against program runaway,
etc.
Do not set or clear the SWE bit during execution of a program in flash memory: Wait for at
least 100 µs after clearing the SWE bit before executing a program or reading data in flash
memory. When the SWE bit is set, data in flash memory can be rewritten, but when SWE = 1,
flash memory can only be read in program-verify or erase-verify mode. Access flash memory only
for verify operations (verification during programming/erasing). Also, do not clear the SWE bit
during programming, erasing, or verifying.
Similarly, when using the RAM emulation function while a high level is being input to the FWE
pin, the SWE bit must be cleared before executing a program or reading data in flash memory.
However, the RAM area overlapping flash memory space can be read and written to regardless of
whether the SWE bit is set or cleared.
Rev.4.00 Sep. 07, 2007 Page 842 of 1210
REJ09B0245-0400
time).
reset state. FWE input can also be switched during execution of a program in flash memory.
cleared.
Make sure that the SWE, ESU, PSU, EV, PV, P, and E bits are not set by mistake when
applying or disconnecting FWE.
CC
voltage has stabilized within its rated voltage range.
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