DF2339VFC25V Renesas Electronics America, DF2339VFC25V Datasheet - Page 208
![IC H8S/2300 MCU FLASH 144QFP](/photos/12/22/122258/df2339vfc25v_sml.jpg)
DF2339VFC25V
Manufacturer Part Number
DF2339VFC25V
Description
IC H8S/2300 MCU FLASH 144QFP
Manufacturer
Renesas Electronics America
Series
H8® H8S/2300r
Datasheets
1.HEWH8E10A.pdf
(19 pages)
2.D12312SVTE25V.pdf
(341 pages)
3.DF2338VFC25V.pdf
(1246 pages)
Specifications of DF2339VFC25V
Core Processor
H8S/2000
Core Size
16-Bit
Speed
25MHz
Connectivity
SCI, SmartCard
Peripherals
DMA, POR, PWM, WDT
Number Of I /o
106
Program Memory Size
384KB (384K x 8)
Program Memory Type
FLASH
Ram Size
32K x 8
Voltage - Supply (vcc/vdd)
3 V ~ 3.6 V
Data Converters
A/D 12x10b; D/A 4x8b
Oscillator Type
Internal
Operating Temperature
-20°C ~ 75°C
Package / Case
144-QFP
For Use With
EDK2329 - DEV EVALUATION KIT H8S/2329
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Eeprom Size
-
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
DF2339VFC25V
Manufacturer:
Renesas Electronics America
Quantity:
10 000
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6.5.10
With DRAM, in addition to full access (normal access) in which data is accessed by outputting a
row address for each access, a fast page mode is also provided which can be used when making a
number of consecutive accesses to the same row address. This mode enables fast (burst) access of
data by simply changing the column address after the row address has been output. Burst access
can be selected by setting the BE bit in MCR to 1.
Burst Access (Fast Page Mode) Operation Timing: Figure 6.20 shows the operation timing for
burst access. When there are consecutive access cycles for DRAM space, the CAS signal and
column address output cycles (two states) continue as long as the row address is the same for
consecutive access cycles. The row address used for the comparison is set with bits MXC1 and
MXC0 in MCR.
The bus cycle can also be extended in burst access by inserting wait states. The wait state insertion
method and timing are the same as for full access. For details, see section 6.4.5, Wait Control.
Rev.4.00 Sep. 07, 2007 Page 176 of 1210
REJ09B0245-0400
Read
Write
Note: n = 2 to 5
Burst Operation
A
CS
CAS, LCAS
HWR (WE)
D
HWR (WE)
D
φ
23
15
15
n
to A
to D
to D
(RAS)
0
0
0
Figure 6.20 Operation Timing in Fast Page Mode
T
p
Row
T
r
T
c1
Column 1
T
c2
T
c1
Column 2
T
c2
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