DF2339VFC25V Renesas Electronics America, DF2339VFC25V Datasheet - Page 201

IC H8S/2300 MCU FLASH 144QFP

DF2339VFC25V

Manufacturer Part Number
DF2339VFC25V
Description
IC H8S/2300 MCU FLASH 144QFP
Manufacturer
Renesas Electronics America
Series
H8® H8S/2300r
Datasheets

Specifications of DF2339VFC25V

Core Processor
H8S/2000
Core Size
16-Bit
Speed
25MHz
Connectivity
SCI, SmartCard
Peripherals
DMA, POR, PWM, WDT
Number Of I /o
106
Program Memory Size
384KB (384K x 8)
Program Memory Type
FLASH
Ram Size
32K x 8
Voltage - Supply (vcc/vdd)
3 V ~ 3.6 V
Data Converters
A/D 12x10b; D/A 4x8b
Oscillator Type
Internal
Operating Temperature
-20°C ~ 75°C
Package / Case
144-QFP
For Use With
EDK2329 - DEV EVALUATION KIT H8S/2329
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Eeprom Size
-

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
DF2339VFC25V
Manufacturer:
Renesas Electronics America
Quantity:
10 000
6.5.4
If the bit in ABWCR corresponding to an area designated as DRAM space is set to 1, that area is
designated as 8-bit DRAM space; if the bit is cleared to 0, the area is designated as 16-bit DRAM
space. In 16-bit DRAM space, ×16-bit configuration DRAM can be connected directly.
In 8-bit DRAM space the upper half of the data bus, D
space both the upper and lower halves of the data bus, D
Access sizes and data alignment are the same as for the basic bus interface. For details, see section
6.4.2, Data Size and Data Alignment.
6.5.5
Table 6.6 shows the pins used for DRAM interfacing and their functions.
Table 6.6
Pin
HWR
LCAS
CS
CS
CS
CS
CAS
WAIT
A
D
12
15
2
3
4
5
to A
to D
0
0
Data Bus
Pins Used for DRAM Interface
DRAM Interface Pins
With DRAM
Setting
WE
LCAS
RAS2
RAS3
RAS4
RAS5
UCAS
WAIT
A
D
12
15
to A
to D
0
0
Name
Write enable
Lower column
address strobe
Row address
strobe 2
Row address
strobe 3
Row address
strobe 4
Row address
strobe 5
Upper column
address strobe
Wait
Address pins
Data pins
I/O
Output
Output
Output
Output
Output
Output
Output
Input
Output
I/O
15
Rev.4.00 Sep. 07, 2007 Page 169 of 1210
15
to D
Function
Write enable for DRAM space access
when 2-CAS access is set
Lower column address strobe signal for
16-bit DRAM space access
Row address strobe when area 2 is
designated as DRAM space
Row address strobe when area 3 is
designated as DRAM space
Row address strobe when area 4 is
designated as DRAM space
Row address strobe when area 5 is
designated as DRAM space
Upper column address strobe for DRAM
space access
Wait request signal
Row address/column address
multiplexed output
Data input/output pins
to D
8
, is enabled, while in 16-bit DRAM
0
, are enabled.
REJ09B0245-0400

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