DF2339VFC25V Renesas Electronics America, DF2339VFC25V Datasheet - Page 846

IC H8S/2300 MCU FLASH 144QFP

DF2339VFC25V

Manufacturer Part Number
DF2339VFC25V
Description
IC H8S/2300 MCU FLASH 144QFP
Manufacturer
Renesas Electronics America
Series
H8® H8S/2300r
Datasheets

Specifications of DF2339VFC25V

Core Processor
H8S/2000
Core Size
16-Bit
Speed
25MHz
Connectivity
SCI, SmartCard
Peripherals
DMA, POR, PWM, WDT
Number Of I /o
106
Program Memory Size
384KB (384K x 8)
Program Memory Type
FLASH
Ram Size
32K x 8
Voltage - Supply (vcc/vdd)
3 V ~ 3.6 V
Data Converters
A/D 12x10b; D/A 4x8b
Oscillator Type
Internal
Operating Temperature
-20°C ~ 75°C
Package / Case
144-QFP
For Use With
EDK2329 - DEV EVALUATION KIT H8S/2329
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Eeprom Size
-

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
DF2339VFC25V
Manufacturer:
Renesas Electronics America
Quantity:
10 000
Rev.4.00 Sep. 07, 2007 Page 814 of 1210
REJ09B0245-0400
Notes: Do not apply a constant high level to the FWE pin. Apply a high level to the FWE pin
only when the flash memory is programmed or erased. Also, while a high level is
applied to the FWE pin, the watchdog timer should be activated to prevent
overprogramming or overerasing due to program runaway, etc.
* For further information on FWE application and disconnection, see section 19.21,
Flash Memory Programming and Erasing Precautions.
Figure 19.40 User Program Mode Execution Procedure
Write the FWE assessment program and
transfer program (and the program/erase
control program if necessary) beforehand
Branch to flash memory application
program (flash memory rewriting)
Branch to program/erase control
Transfer program/erase control
Execute program/erase control
MD2, MD1, MD0 = 110, 111
program in RAM area
program to RAM
FWE = high*
Clear FWE*
Reset-start
program

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