DF2339VFC25V Renesas Electronics America, DF2339VFC25V Datasheet - Page 214

• Manufacturer Part Number: DF2339VFC25V
• Description: IC H8S/2300 MCU FLASH 144QFP
• Manufacturer: Renesas Electronics America
• Series: H8® H8S/2300r

Specifications of DF2339VFC25V

• Core Processor: H8S/2000
• Core Size: 16-Bit
• Speed: 25MHz
• Connectivity: SCI, SmartCard
• Peripherals: DMA, POR, PWM, WDT
• Number Of I /o: 106
• Program Memory Size: 384KB (384K x 8)
• Program Memory Type: FLASH
• Ram Size: 32K x 8
• Voltage - Supply (vcc/vdd): 3 V ~ 3.6 V
• Data Converters: A/D 12x10b; D/A 4x8b
• Oscillator Type: Internal
• Operating Temperature: -20°C ~ 75°C
• Package / Case: 144-QFP
• For Use With: EDK2329 - DEV EVALUATION KIT H8S/2329
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Eeprom Size: -

Self-Refreshing: A self-refresh mode (battery backup mode) is provided for DRAM as a kind of
standby mode. In this mode, refresh timing and refresh addresses are generated within the DRAM.
To select self-refreshing, set the RFSHE bit and RMODE bit in DRAMCR to 1. When a SLEEP
instruction is executed to enter software standby mode, the CAS and RAS signals are output and
DRAM enters self-refresh mode, as shown in figure 6.27.
When software standby mode is exited, the RMODE bit is cleared to 0 and self-refresh mode is
exited.
If a CBR refresh request occurs when making a transition to software standby mode, CBR
refreshing is executed, then self-refresh mode is entered.
Rev.4.00 Sep. 07, 2007 Page 182 of 1210
REJ09B0245-0400
CS
CAS, LCAS
HWR (WE)
Note: n = 2 to 5
φ
n
(RAS)
T
Rp
Figure 6.27 Self-Refresh Timing
T
Rcr
High
Software
standby
T
Rc3