UPD78F1211GB-GAF-AX Renesas Electronics America, UPD78F1211GB-GAF-AX Datasheet - Page 969

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UPD78F1211GB-GAF-AX

Manufacturer Part Number
UPD78F1211GB-GAF-AX
Description
MCU 16BIT 78K0R/LX3 44-LQFP
Manufacturer
Renesas Electronics America
Series
78K0R/Ix3r
Datasheet

Specifications of UPD78F1211GB-GAF-AX

Core Processor
78K/0R
Core Size
16-Bit
Speed
40MHz
Connectivity
3-Wire SIO, I²C, LIN, UART/USART
Peripherals
DMA, LVD, POR, PWM, WDT
Number Of I /o
33
Program Memory Size
16KB (16K x 8)
Program Memory Type
FLASH
Ram Size
1K x 8
Voltage - Supply (vcc/vdd)
2.7 V ~ 5.5 V
Data Converters
A/D 10x10b
Oscillator Type
Internal
Operating Temperature
-40°C ~ 85°C
Package / Case
*
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Eeprom Size
-

Available stocks

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Part Number
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Part Number:
UPD78F1211GB-GAF-AX
Manufacturer:
Renesas Electronics America
Quantity:
10 000
24.7 Security Settings
memory, so that the program cannot be changed by an unauthorized person.
when the programming mode is set next.
setting when the flash memory is shipped.
programming. Each security setting can be used in combination.
enabled.
The 78K0R/Ix3 supports a security function that prohibits rewriting the user program written to the internal flash
The operations shown below can be performed using the Security Set command. The security setting is valid
• Disabling batch erase (chip erase)
• Disabling block erase
• Disabling write
• Disabling rewriting boot cluster 0
The batch erase (chip erase), block erase, write commands, and rewriting boot cluster 0 are enabled by the default
All the security settings are cleared by executing the batch erase (chip erase) command.
Table 24-7 shows the relationship between the erase and write commands when the 78K0R/Ix3 security function is
Remark To prohibit writing and erasing during self-programming, use the flash sealed window function (see 24.8.2
Execution of the block erase and batch erase (chip erase) commands for entire blocks in the flash memory is
prohibited by this setting during on-board/off-board programming. Once execution of the batch erase (chip
erase) command is prohibited, all of the prohibition settings (including prohibition of batch erase (chip erase)) can
no longer be cancelled.
Execution of the block erase command for a specific block in the flash memory is prohibited during on-board/off-
board programming. However, blocks can be erased by means of self programming.
Execution of the write and block erase commands for entire blocks in the flash memory is prohibited during on-
board/off-board programming. However, blocks can be written by means of self programming.
Execution of the batch erase (chip erase) command, block erase command, and write command on boot cluster
0 in the flash memory is prohibited by this setting.
Caution After the security setting for the batch erase is set, erasure cannot be performed for the device.
for detail).
In addition, even if a write command is executed, data different from that which has already
been written to the flash memory cannot be written, because the erase command is disabled.
CHAPTER 24 FLASH MEMORY
User’s Manual U19678EJ1V1UD
Security can be set by on-board/off-board programming and self
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