DF70845AD80FPV Renesas Electronics America, DF70845AD80FPV Datasheet - Page 382

• Manufacturer Part Number: DF70845AD80FPV
• Description: IC SUPERH MCU FLASH 112LQFP
• Manufacturer: Renesas Electronics America
• Series: SuperH® SH7080r

Specifications of DF70845AD80FPV

• Core Size: 32-Bit
• Program Memory Size: 512KB (512K x 8)
• Core Processor: SH-2
• Speed: 80MHz
• Connectivity: EBI/EMI, FIFO, I²C, SCI, SSU
• Peripherals: DMA, POR, PWM, WDT
• Number Of I /o: 76
• Program Memory Type: FLASH
• Ram Size: 32K x 8
• Voltage - Supply (vcc/vdd): 3 V ~ 5.5 V
• Data Converters: A/D 8x10b
• Oscillator Type: Internal
• Operating Temperature: -40°C ~ 85°C
• Package / Case: 112-LQFP
• No. Of I/o's: 76
• Ram Memory Size: 32KB
• Cpu Speed: 80MHz
• Digital Ic Case Style: LQFP
• Supply Voltage Range: 3V To 3.6V, 4.5V To 5.5V
• Embedded Interface Type: I2C, SCI
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• For Use With: R0K570865S001BE - KIT STARTER FOR SH7086R0K570865S000BE - KIT STARTER FOR SH7086HS0005KCU11H - EMULATOR E10A-USB H8S(X),SH2(A)
• Eeprom Size: -
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant

Section 9 Bus State Controller (BSC)
the access is performed by issuing an ACTV command followed by a READ or WRIT command.
If this is followed by an access to a different row address, the access time will be longer because
of the precharging performed after the access request is issued. The number of cycles between
issuance of the PRE command and the ACTV command is determined by the WTRP1 and
WTRP0 bits in CS3WCR.
In a write, when an auto-precharge is performed, a command cannot be issued to the same bank
for a period of Trwl + Tap cycles after issuance of the WRITA command. When bank active mode
is used, READ or WRIT commands can be issued successively if the row address is the same. The
number of cycles can thus be reduced by Trwl + Tap cycles for each write.
There is a limit on tRAS, the time for placing each bank in the active state. If there is no guarantee
that another row address will be accessed within the period in which this value is maintained by
program execution, it is necessary to set the refresh cycle to no more than the value of tRAS.
A burst read cycle without auto-precharge is shown in figure 9.22, a burst read cycle for the same
row address in figure 9.23, and a burst read cycle for different row addresses in figure 9.24.
Similarly, a single write cycle without auto-precharge is shown in figure 9.25, a single write cycle
for the same row address in figure 9.26, and a single write cycle for different row addresses in
figure 9.27.
In figure 9.23, a Tnop cycle in which no operation is performed is inserted before the Tc cycle that
issues the READ command. The Tnop cycle is inserted to acquire two cycles of CAS latency for
the DQMxx signal that specifies the read byte in the data read from the SDRAM. If the CAS
latency is specified as two cycles or more, the Tnop cycle is not inserted because the two cycles of
latency can be acquired even if the DQMxx signal is asserted after the Tc cycle.
When bank active mode is set, if only accesses to the respective banks in area 3 are considered, as
long as accesses to the same row address continue, the operation starts with the cycle in figure
9.22 or 9.25, followed by repetition of the cycle in figure 9.23 or 9.26. An access to a different
area or bank during this time has no effect. If there is an access to a different row address in the
bank active state, after this is detected the bus cycle in figure 9.23 or 9.26 is executed instead of
that in figure 9.24 or 9.27. In bank active mode, too, all banks become inactive after a refresh
cycle or after the bus is released as the result of bus arbitration.
Rev. 3.00 May 17, 2007 Page 324 of 1582
REJ09B0181-0300