DF70845AD80FPV Renesas Electronics America, DF70845AD80FPV Datasheet - Page 1322

IC SUPERH MCU FLASH 112LQFP

DF70845AD80FPV

Manufacturer Part Number
DF70845AD80FPV
Description
IC SUPERH MCU FLASH 112LQFP
Manufacturer
Renesas Electronics America
Series
SuperH® SH7080r
Datasheet

Specifications of DF70845AD80FPV

Core Size
32-Bit
Program Memory Size
512KB (512K x 8)
Core Processor
SH-2
Speed
80MHz
Connectivity
EBI/EMI, FIFO, I²C, SCI, SSU
Peripherals
DMA, POR, PWM, WDT
Number Of I /o
76
Program Memory Type
FLASH
Ram Size
32K x 8
Voltage - Supply (vcc/vdd)
3 V ~ 5.5 V
Data Converters
A/D 8x10b
Oscillator Type
Internal
Operating Temperature
-40°C ~ 85°C
Package / Case
112-LQFP
No. Of I/o's
76
Ram Memory Size
32KB
Cpu Speed
80MHz
Digital Ic Case Style
LQFP
Supply Voltage Range
3V To 3.6V, 4.5V To 5.5V
Embedded Interface Type
I2C, SCI
Rohs Compliant
Yes
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
For Use With
R0K570865S001BE - KIT STARTER FOR SH7086R0K570865S000BE - KIT STARTER FOR SH7086HS0005KCU11H - EMULATOR E10A-USB H8S(X),SH2(A)
Eeprom Size
-
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
DF70845AD80FPV
Manufacturer:
TAIYO
Quantity:
40 000
Part Number:
DF70845AD80FPV
Manufacturer:
Renesas Electronics America
Quantity:
10 000
Section 23 Flash Memory
(3.1) Select the on-chip program to be downloaded
(3.2) Set the FEBS parameter necessary for erasure
(3.3) Erasure
Rev. 3.00 May 17, 2007 Page 1264 of 1582
REJ09B0181-0300
MOV.L #DLTOP+16,R1
JSR
NOP
After the programming/erasing program has been downloaded and the SCO bit is cleared to 0,
the setting of the frequency control register (FRQCR) can be changed to the desired value.
For the downloaded on-chip program area, see the RAM map for programming/erasing in
figure 23.10.
A single divided block is erased by one erasing processing. For block divisions, see figure
23.4. To erase two or more blocks, update the erase block number and perform the erasing
processing for each block.
Set the EPVB bit in FECS to 1.
Several programming/erasing programs cannot be selected at one time. If several programs are
set, download is not performed and a download error is returned to the source select error
detect (SS) bit in the DPFR parameter.
Specify the start address of the download destination by FTDAR.
The procedures to be carried out after setting FKEY, e.g. download and initialization, are the
same as those in the programming procedure. For details, see the description in section 23.5.2
(2), Programming Procedure in User Program Mode.
Set the erase block number of the user MAT in the flash erase block select parameter (FEBS:
general register R4). If a value other than an erase block number of the user MAT is set, no
block is erased even though the erasing program is executed, and an error is returned to the
return value parameter FPFR.
Similar to as in programming, there is an entry point of the erasing program in the area from
(download start address set by FTDAR) + 16 bytes of on-chip RAM. The subroutine is called
and erasing is executed by using the following steps.
 The general registers other than R0 are saved in the erasing program.
 R0 is a return value of the FPFR parameter.
 Since the stack area is used in the erasing program, a stack area of maximum 128 bytes
must be reserved in RAM.
@R1
; Set entry address to R1
; Call erasing routine

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