ATxmega32D4 Atmel Corporation, ATxmega32D4 Datasheet - Page 287
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ATxmega32D4
Manufacturer Part Number
ATxmega32D4
Description
Manufacturer
Atmel Corporation
Specifications of ATxmega32D4
Flash (kbytes)
32 Kbytes
Pin Count
44
Max. Operating Frequency
32 MHz
Cpu
8-bit AVR
# Of Touch Channels
16
Hardware Qtouch Acquisition
No
Max I/o Pins
34
Ext Interrupts
34
Usb Speed
No
Usb Interface
No
Spi
4
Twi (i2c)
2
Uart
2
Graphic Lcd
No
Video Decoder
No
Camera Interface
No
Adc Channels
12
Adc Resolution (bits)
12
Adc Speed (ksps)
200
Analog Comparators
2
Resistive Touch Screen
No
Temp. Sensor
Yes
Crypto Engine
No
Sram (kbytes)
4
Eeprom (bytes)
1024
Self Program Memory
YES
Dram Memory
No
Nand Interface
No
Picopower
Yes
Temp. Range (deg C)
-40 to 85
I/o Supply Class
1.6 to 3.6
Operating Voltage (vcc)
1.6 to 3.6
Fpu
No
Mpu / Mmu
no / no
Timers
4
Output Compare Channels
14
Input Capture Channels
14
Pwm Channels
14
32khz Rtc
Yes
Calibrated Rc Oscillator
Yes
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
ATxmega32D4-AU
Manufacturer:
Atmel
Quantity:
123
Part Number:
ATxmega32D4-AU
Manufacturer:
ATMEL/爱特梅尔
Quantity:
20 000
Company:
Part Number:
ATxmega32D4-CU
Manufacturer:
Maxim
Quantity:
71
Company:
Part Number:
ATxmega32D4-MH
Manufacturer:
Atmel
Quantity:
1 910
Company:
Part Number:
ATxmega32D4-MH
Manufacturer:
Atmel
Quantity:
1 704
Part Number:
ATxmega32D4-MH
Manufacturer:
ATMEL/爱特梅尔
Quantity:
20 000
23.10.5.4
23.10.5.5
23.10.5.6
23.10.5.7
8210B–AVR–04/10
Write EEPROM Page
Erase & Write EEPROM Page
Read EPPROM
Erase EEPROM
The Page Erase commands will only erase the locations that correspond with the loaded and
tagged locations in the EEPROM page buffer.
The Write EEPROM Page command is used to write all locations that is loaded in the EEPROM
page buffer into one page in EEPROM. Only the locations that are loaded and tagged in the
EEPROM page buffer will be written.
1.
2.
3.
self-programming.
The BUSY flag in the NVM STATUS register will be set until the operation is finished.
The Erase & Write EEPROM Page command is used to first erase an EEPROM page and write
the EEPROM page buffer into that page in EEPROM, in one atomic operation.
1.
2.
3.
self-programming.
The BUSY flag in the NVM STATUS register will be set until the operation is finished.
The Erase EEPROM command is used to erase all the locations in all EEPROM pages that cor-
responds the loaded and tagged locations in the EEPROM page buffer.
1.
2.
self-programming.
The BUSY flag in the NVM STATUS register will be set until the operation is finished.
The Read EEPROM command is used to read one byte from the EEPROM,
1.
2.
3.
self-programming.
The data byte read will be available in the NVM DATA0.
Load the NVM CMD register with the Write EEPROM Page command.
Load the NVM ADDR register with the address for EEPROM page to write.
Set the CMDEX bit in NVM CTRLA register. This requires the timed CCP sequence during
Load the NVM CMD register with the Erase & Write EEPROM Page command.
Load the NVM ADDR register with the address for EEPROM page to write.
Set the CMDEX bit in NVM CTRLA register. This requires the timed CCP sequence during
Set up the NVM CMD register to Erase EPPROM command.
Set the CMDEX bit in NVM CTRLA register. This requires the timed CCP sequence during
Load the NVM CMD register with the Read EPPROM command.
Load the NVM ADDR register with the address to read.
Set the CMDEX bit in NVM CTRLA register. This requires the timed CCP sequence during
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