LFXP3C-3TN100I Lattice, LFXP3C-3TN100I Datasheet - Page 174

FPGA - Field Programmable Gate Array 3.1K LUTs 62 IO 1.8/ 2.5/3.3V -3 Spd I

LFXP3C-3TN100I

Manufacturer Part Number
LFXP3C-3TN100I
Description
FPGA - Field Programmable Gate Array 3.1K LUTs 62 IO 1.8/ 2.5/3.3V -3 Spd I
Manufacturer
Lattice
Datasheets

Specifications of LFXP3C-3TN100I

Number Of Programmable I/os
62
Data Ram Size
55296
Supply Voltage (max)
3.465 V
Maximum Operating Temperature
+ 100 C
Minimum Operating Temperature
- 40 C
Mounting Style
SMD/SMT
Supply Voltage (min)
1.71 V
Package / Case
TQFP-100
Package
100TQFP
Family Name
LatticeXP
Device Logic Units
3000
Maximum Internal Frequency
320 MHz
Typical Operating Supply Voltage
1.8|2.5|3.3 V
Maximum Number Of User I/os
62
Ram Bits
55296
Re-programmability Support
Yes
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
LFXP3C-3TN100I
Manufacturer:
Lattice Semiconductor Corporation
Quantity:
10 000
Lattice Semiconductor
The Single Port RAM (RAM_DQ) can be configured as NORMAL, READ BEFORE WRITE or WRITE THROUGH
modes. Each of these modes affects what data comes out of the port Q of the memory during the write operation
followed by the read operation at the same memory location. The READ BEFORE WRITE attribute is supported for
x9, x18 and x36 data widths.
Additionally users can select to enable the output registers for RAM_DQ. Figures 8-7 through 8-12 show the inter-
nal timing waveforms for the Single Port RAM (RAM_DQ) with these options.
Figure 9-9. Single Port RAM Timing Waveform – NORMAL Mode, without Output Registers
ClockEn
Address
Clock
WrEn
Data
Q
t
t
SUADDR_EBR
SUDATA_EBR
t
SUCE_EBR
Data_0
Add_0
t
SUWREN_EBR
t
t
HADDR_EBR
HDATA_EBR
Invalid Data
Data_1
Add_1
t
HWREN_EBR
9-9
Add_0
LatticeECP/EC and LatticeXP Devices
t
CO_EBR
Data_0
Add_1
Memory Usage Guide
Data_1
Add_2
t
HCE_EBR
Data_2

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