SAK-TC1796-256F150E BD Infineon Technologies, SAK-TC1796-256F150E BD Datasheet - Page 38

IC MCU 32BIT FLASH PG-BGA-416

SAK-TC1796-256F150E BD

Manufacturer Part Number
SAK-TC1796-256F150E BD
Description
IC MCU 32BIT FLASH PG-BGA-416
Manufacturer
Infineon Technologies
Series
TC17xxr
Datasheet

Specifications of SAK-TC1796-256F150E BD

Core Processor
TriCore
Core Size
32-Bit
Speed
150MHz
Connectivity
ASC, CAN, EBI/EMI, MLI, MSC, SSC
Peripherals
DMA, POR, WDT
Number Of I /o
123
Program Memory Size
2MB (2M x 8)
Program Memory Type
FLASH
Ram Size
256K x 8
Voltage - Supply (vcc/vdd)
1.42 V ~ 1.58 V
Data Converters
A/D 44x12b
Oscillator Type
External
Operating Temperature
-40°C ~ 125°C
Package / Case
416-BGA
Packages
PG-BGA-416
Max Clock Frequency
150.0 MHz
Sram (incl. Cache)
256.0 KByte
Can Nodes
4
A / D Input Lines (incl. Fadc)
44
Program Memory
2.0 MB
For Use With
B158-H8537-G2-X-7600IN - KIT STARTER TC179X FAMILY
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Eeprom Size
-
Other names
KT1796256F150EBDXP
SAK-TC1796-256F150EBDIN
SP000228336
Features of the Data Flash
Data Sheet
JEDEC standard based command sequences for PFLASH control
– Write state machine controls programming and erase operations
– Status and error reporting by status flags and interrupt
Margin check for detection of problematic PFLASH bits
128 Kbyte on-chip data Flash memory, organized in two 64 Kbyte banks
Usable for data storage with EEPROM functionality
128 Byte program interface
– 128 bytes are programmed into one DFLASH page by one step/command
64-bit read interface (no burst transfers)
Dynamic correction of single-bit errors during read access
Detection of double bit errors
Fixed sector architecture
– Two 64 Kbyte banks/sectors
– Each sector separately erasable
Configurable read protection (combined with write protection) for complete DFLASH
together with PFLASH read protection
Password mechanism to temporarily disable write and read protection
Erasing/programming of one bank possible while reading data from the other bank
Programming of one bank possible while erasing the other bank
On-chip generation of programming voltage
DFLASH is delivered in erased state (read all zeros)
JEDEC-standard based command sequences for DFLASH control
– Write state machine controls programming and erase operations
– Status and error reporting by status flags and interrupt
Margin check for detection of problematic DFLASH bits
38
Functional Description
V1.0, 2008-04
TC1796

Related parts for SAK-TC1796-256F150E BD