HD64F2676VFC33 Renesas Electronics America, HD64F2676VFC33 Datasheet - Page 296

IC H8S MCU FLASH 256K 144-QFP

HD64F2676VFC33

Manufacturer Part Number
HD64F2676VFC33
Description
IC H8S MCU FLASH 256K 144-QFP
Manufacturer
Renesas Electronics America
Series
H8® H8S/2600r
Datasheets

Specifications of HD64F2676VFC33

Core Processor
H8S/2600
Core Size
16-Bit
Speed
33MHz
Connectivity
IrDA, SCI
Peripherals
DMA, POR, PWM, WDT
Number Of I /o
103
Program Memory Size
256KB (256K x 8)
Program Memory Type
FLASH
Ram Size
8K x 8
Voltage - Supply (vcc/vdd)
3 V ~ 3.6 V
Data Converters
A/D 12x10b; D/A 4x8b
Oscillator Type
Internal
Operating Temperature
-20°C ~ 75°C
Package / Case
144-QFP
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Eeprom Size
-

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Section 6 Bus Controller (BSC)
If a normal space read cycle occurs after a continuous synchronous DRAM space write access
while the ICIS2 bit is set to 1 in BCR, idle cycle is inserted at the start of the read cycle. The
number of states of the idle cycle to be inserted is in accordance with the setting of bit IDLC. It is
not in accordance with the DRMI bit in DRACCR.
Figure 6.80 shows an example of idle cycle operation when the ICIS2 bit is set to 1.
Rev. 3.00 Mar 17, 2006 page 244 of 926
REJ09B0283-0300
Figure 6.79 Example of Idle Cycle Operation after Continuous Synchronous DRAM Space
Precharge-sel
DQMU, DQML
Address bus
Normal space access after a continuous synchronous DRAM space write access
Data bus
CKE
CAS
RAS
WE
RD
Read Access (Read between Different Area) (IDLC = 0, CAS Latency 2)
PALL ACTV READ
address
Column
T
p
Continuous synchronous
DRAM space read
address
address
Row
Row
T
r
T
Column address 1
c1
T
cl
T
c2
Idle cycle
High
T
i
External space read
External address
External address
T
1
NOP
T
2
T
3
Continuous synchronous
DRAM space read
T
i
Column address 2
T
c1
READ
T
Cl
NOP
T
c2

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