HD64F2676VFC33 Renesas Electronics America, HD64F2676VFC33 Datasheet - Page 289
HD64F2676VFC33
Manufacturer Part Number
HD64F2676VFC33
Description
IC H8S MCU FLASH 256K 144-QFP
Manufacturer
Renesas Electronics America
Series
H8® H8S/2600r
Specifications of HD64F2676VFC33
Core Processor
H8S/2600
Core Size
16-Bit
Speed
33MHz
Connectivity
IrDA, SCI
Peripherals
DMA, POR, PWM, WDT
Number Of I /o
103
Program Memory Size
256KB (256K x 8)
Program Memory Type
FLASH
Ram Size
8K x 8
Voltage - Supply (vcc/vdd)
3 V ~ 3.6 V
Data Converters
A/D 12x10b; D/A 4x8b
Oscillator Type
Internal
Operating Temperature
-20°C ~ 75°C
Package / Case
144-QFP
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Eeprom Size
-
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Idle Cycle in Case of Continuous Synchronous DRAM Space Access after Normal Space
Access: In a continuous synchronous DRAM space access following a normal space access, the
settings of bits ICIS2, ICIS1, ICIS0, and IDLC in BCR are valid. However, in the case of
consecutive reads in different areas, for example, if the second read is a full access to continuous
synchronous DRAM space, only T
shown in figure 6.72.
Note: In the H8S/2678 Group, the synchronous DRAM interface is not supported.
In burst access in RAS down mode, the settings of bits ICIS2, ICIS1, ICIS0, and IDLC are valid
and an idle cycle is inserted. However, in read access, note that the timings of DQMU and DQML
differ according to the settings of the IDLC bit. The timing in this case is illustrated in figures 6.73
Figure 6.72 Example of Synchronous DRAM Full Access after External Read
Precharge-sel
DQMU, DQML
Address bus
Data bus
CKE
CAS
RAS
WE
RD
External space read
T
p
1
cycle is inserted, and T
NOP
T
(CAS Latency 2)
2
T
3
PALL ACTV
address
Column
T
Synchronous DRAM space read
p
address
address
Rev. 3.00 Mar 17, 2006 page 237 of 926
Row
Row
T
i
r
cycle is not. The timing in this case is
READ
T
c1
Column address
Section 6 Bus Controller (BSC)
T
cl
NOP
T
c2
REJ09B0283-0300
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