HD64F2676VFC33 Renesas Electronics America, HD64F2676VFC33 Datasheet - Page 253

• Manufacturer Part Number: HD64F2676VFC33
• Description: IC H8S MCU FLASH 256K 144-QFP
• Manufacturer: Renesas Electronics America
• Series: H8® H8S/2600r

Specifications of HD64F2676VFC33

• Core Processor: H8S/2600
• Core Size: 16-Bit
• Speed: 33MHz
• Connectivity: IrDA, SCI
• Peripherals: DMA, POR, PWM, WDT
• Number Of I /o: 103
• Program Memory Size: 256KB (256K x 8)
• Program Memory Type: FLASH
• Ram Size: 8K x 8
• Voltage - Supply (vcc/vdd): 3 V ~ 3.6 V
• Data Converters: A/D 12x10b; D/A 4x8b
• Oscillator Type: Internal
• Operating Temperature: -20°C ~ 75°C
• Package / Case: 144-QFP
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Eeprom Size: -

Table 6.9
Pin
CS2
CS3
CS4
CS5
(OE)
UCAS
LCAS
A15 to A0
D15 to D0
DCTL
Synchronous DRAM Interface Pins
With
Synchronous
DRAM Setting
RAS
CAS
WE
SDRAM
(CKE)
DQMU
DQML
A15 to A0
D15 to D0
DCTL
Name
Row address strobe
Column address
strobe
Write enable
Clock
Clock enable
Upper data mask
enable
Lower data mask
enable
Address pins
Data pins
Device control pin
Output
I/O
I/O
Output
Output
Output
Output
Output
Output
Output
Input
Rev. 3.00 Mar 17, 2006 page 201 of 926
Section 6 Bus Controller (BSC)
Function
Row address strobe when
areas 2 to 5 are designated
as continuous synchronous
DRAM space
Column address strobe when
areas 2 to 5 are designated
as continuous synchronous
DRAM space
Write enable strobe when
areas 2 to 5 are designated
as continuous synchronous
DRAM space
Clock only for synchronous
DRAM
Clock enable signal when
areas 2 to 5 are designated
as continuous synchronous
DRAM space
Upper data mask enable for
16-bit continuous
synchronous DRAM space
access/data mask enable for
8-bit continuous synchronous
DRAM space access
Lower data mask enable
signal for 16-bit continuous
synchronous DRAM space
access
Row address/column
address multiplexed output
pins
Data input/output pins
Output enable pin for
SDRAM
REJ09B0283-0300