DF2148ATE20 Renesas Electronics America, DF2148ATE20 Datasheet - Page 775

• Manufacturer Part Number: DF2148ATE20
• Description: IC H8S MCU FLASH 128K 100-QFP
• Manufacturer: Renesas Electronics America
• Series: H8® H8S/2100r

Specifications of DF2148ATE20

• Core Processor: H8S/2000
• Core Size: 16-Bit
• Speed: 20MHz
• Connectivity: Host Interface, I²C, IrDA, SCI
• Peripherals: POR, PWM, WDT
• Number Of I /o: 74
• Program Memory Size: 128KB (128K x 8)
• Program Memory Type: FLASH
• Ram Size: 4K x 8
• Voltage - Supply (vcc/vdd): 4 V ~ 5.5 V
• Data Converters: A/D 8x10b; D/A 2x8b
• Oscillator Type: Internal
• Operating Temperature: -20°C ~ 75°C
• Package / Case: 100-TQFP, 100-VQFP
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Eeprom Size: -
• Other names: HD64F2148ATE20; HD64F2148ATE20

23.10.10 Notes on Memory Programming
Notes: 1. The flash memory is initially in the erased state when the device is shipped by Renesas.
23.11
Precautions concerning the use of on-board programming mode and programmer mode are
summarized below.
Use the specified voltages and timing for programming and erasing.
Applied voltages in excess of the rating can permanently damage the device. For a PROM
programmer, use Renesas Technology microcomputer device types with 128-kbyte or 64-kbyte
on-chip flash memory that support a 3.3-V programming voltage.
Do not select the HN28F101, or use a programming voltage of 5.0 V for the PROM programmer,
and only use the specified socket adapter. Incorrect use will result in damaging the device.
Powering on and off
When applying or disconnecting V
hardware protection state.
The power-on and power-off timing requirements should also be satisfied in the event of a power
failure and subsequent recovery.
Use the recommended algorithm when programming and erasing flash memory.
The recommended algorithm enables programming and erasing to be carried out without
subjecting the device to voltage stress or sacrificing program data reliability. When setting the P or
E bit in FLMCR1, the watchdog timer should be set beforehand as a precaution against program
runaway, etc.
When programming addresses which have previously been programmed, carry out auto-
erasing before auto-programming.
When performing programming using programmer mode on a chip that has been
programmed/erased in an on-board programming mode, auto-erasing is recommended before
carrying out auto-programming.
2. Auto-programming should be performed once only on the same address block.
Section 23 ROM
Flash Memory Programming and Erasing Precautions
For other chips for which the erasure history is unknown, it is recommended that auto-
erasing be executed to check and supplement the initialization (erase) level.
(H8S/2148 F-ZTAT A-Mask Version, H8S/2147 F-ZTAT A-Mask Version, H8S/2144 F-ZTAT A-Mask Version)
CC
, fix the RES pin low and place the flash memory in the
Rev. 4.00 Sep 27, 2006 page 729 of 1130
REJ09B0327-0400