DF2148ATE20 Renesas Electronics America, DF2148ATE20 Datasheet - Page 714

IC H8S MCU FLASH 128K 100-QFP

DF2148ATE20

Manufacturer Part Number
DF2148ATE20
Description
IC H8S MCU FLASH 128K 100-QFP
Manufacturer
Renesas Electronics America
Series
H8® H8S/2100r
Datasheets

Specifications of DF2148ATE20

Core Processor
H8S/2000
Core Size
16-Bit
Speed
20MHz
Connectivity
Host Interface, I²C, IrDA, SCI
Peripherals
POR, PWM, WDT
Number Of I /o
74
Program Memory Size
128KB (128K x 8)
Program Memory Type
FLASH
Ram Size
4K x 8
Voltage - Supply (vcc/vdd)
4 V ~ 5.5 V
Data Converters
A/D 8x10b; D/A 2x8b
Oscillator Type
Internal
Operating Temperature
-20°C ~ 75°C
Package / Case
100-TQFP, 100-VQFP
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Eeprom Size
-
Other names
HD64F2148ATE20
HD64F2148ATE20

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
DF2148ATE20IV
Manufacturer:
Renesas Electronics America
Quantity:
135
Part Number:
DF2148ATE20IV
Manufacturer:
Renesas Electronics America
Quantity:
10 000
Section 22 ROM
Table 22.9 Software Protection
Item
SWE bit protection
Block specification
protection
22.8.3
In error protection, an error is detected when MCU runaway occurs during flash memory
programming/erasing, or operation is not performed in accordance with the program/erase
algorithm, and the program/erase operation is aborted. Aborting the program/erase operation
prevents damage to the flash memory due to overprogramming or overerasing.
If the MCU malfunctions during flash memory programming/erasing, the FLER bit is set to 1 in
FLMCR2 and the error protection state is entered. The FLMCR1, FLMCR2, EBR1, and EBR2
settings are retained, but program mode or erase mode is aborted at the point at which the error
occurred. Program mode or erase mode cannot be re-entered by re-setting the P or E bit. However,
PV and EV bit setting is enabled, and a transition can be made to verify mode.
FLER bit setting conditions are as follows:
Error protection is released only by a reset and in hardware standby mode.
Figure 22.14 shows the flash memory state transition diagram.
Rev. 4.00 Sep 27, 2006 page 668 of 1130
REJ09B0327-0400
When flash memory is read during programming/erasing (including a vector read or instruction
fetch)
Immediately after exception handling (excluding a reset) during programming/erasing
When a SLEEP instruction (transition to software standby, sleep, subactive, subsleep, or watch
mode) is executed during programming/erasing
When the bus is released during programming/erasing
Error Protection
(Mask ROM Version, H8S/2148 F-ZTAT, H8S/2147N F-ZTAT, H8S/2144 F-ZTAT, and H8S/2142 F-ZTAT)
Description
Clearing the SWE bit to 0 in FLMCR1 sets the
program/erase-protected state for all blocks.
(Execute in on-chip RAM or external memory.)
Erase protection can be set for individual blocks
by settings in erase block registers 1 and 2
(EBR1, EBR2).
Setting EBR1 and EBR2 to H'00 places all blocks
in the erase-protected state.
Program
Yes
Functions
Erase
Yes
Yes

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