DF2148ATE20 Renesas Electronics America, DF2148ATE20 Datasheet - Page 719

IC H8S MCU FLASH 128K 100-QFP

DF2148ATE20

Manufacturer Part Number
DF2148ATE20
Description
IC H8S MCU FLASH 128K 100-QFP
Manufacturer
Renesas Electronics America
Series
H8® H8S/2100r
Datasheets

Specifications of DF2148ATE20

Core Processor
H8S/2000
Core Size
16-Bit
Speed
20MHz
Connectivity
Host Interface, I²C, IrDA, SCI
Peripherals
POR, PWM, WDT
Number Of I /o
74
Program Memory Size
128KB (128K x 8)
Program Memory Type
FLASH
Ram Size
4K x 8
Voltage - Supply (vcc/vdd)
4 V ~ 5.5 V
Data Converters
A/D 8x10b; D/A 2x8b
Oscillator Type
Internal
Operating Temperature
-20°C ~ 75°C
Package / Case
100-TQFP, 100-VQFP
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Eeprom Size
-
Other names
HD64F2148ATE20
HD64F2148ATE20

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Company
Part Number
Manufacturer
Quantity
Price
Part Number:
DF2148ATE20IV
Manufacturer:
Renesas Electronics America
Quantity:
135
Part Number:
DF2148ATE20IV
Manufacturer:
Renesas Electronics America
Quantity:
10 000
Table 22.11 Settings for Each Operating Mode in Programmer Mode
Notes: 1. Chip disable is not a standby state; internally, it is an operation state.
Table 22.12 Programmer Mode Commands
Notes: 1. In auto-program mode, 129 cycles are required for command writing by a simultaneous
22.10.4 Memory Read Mode
Mode
Read
Output disable
Command write
Chip disable *
Command Name
Memory read mode
Auto-program mode
Auto-erase mode
Status read mode
After the end of an auto-program, auto-erase, or status read operation, the command wait state
is entered. To read memory contents, a transition must be made to memory read mode by
means of a command write before the read is executed.
Command writes can be performed in memory read mode, just as in the command wait state.
Once memory read mode has been entered, consecutive reads can be performed.
After power-on, memory read mode is entered.
2. Ain indicates that there is also address input in auto-program mode.
2. In memory read mode, the number of cycles depends on the number of address write
Section 22 ROM
128-byte write.
cycles (n).
1
Number
of Cycles
1 + n
129
2
2
CE
CE
CE
CE
L
L
L
H
(Mask ROM Version, H8S/2148 F-ZTAT, H8S/2147N F-ZTAT, H8S/2144 F-ZTAT, and H8S/2142 F-ZTAT)
Mode
Write
Write
Write
Write
OE
OE
L
H
H
X
OE
OE
1st Cycle
Address Data
X
X
X
X
WE
WE
WE
WE
H
H
L
X
Rev. 4.00 Sep 27, 2006 page 673 of 1130
Pin Names
H'00
H'40
H'20
H'71
FO0 to FO7
Data output
Hi-Z
Data input
Hi-Z
Mode
Read
Write
Write
Write
2nd Cycle
Address Data
RA
WA
X
X
REJ09B0327-0400
FA0 to FA17
Ain
X
Ain *
X
2
Dout
Din
H'20
H'71

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