LM3S600-IQN20-A0T Bookham Technology, Inc., LM3S600-IQN20-A0T Datasheet - Page 350

• Manufacturer Part Number: LM3S600-IQN20-A0T
• Description: Microcontroller
• Manufacturer: Bookham Technology, Inc.

Electrical Characteristics
18.1.5
18.2
18.2.1
18.2.2
350
Flash Memory Characteristics
Table 18-5. Flash Memory Characteristics
a. A program/erase cycle is defined as switching the bits from 1-> 0 -> 1.
AC Characteristics
Load Conditions
Unless otherwise specified, the following conditions are true for all timing measurements. Timing
measurements are for 4-mA drive strength.
Figure 18-1. Load Conditions
Clocks
Table 18-6. Phase Locked Loop (PLL) Characteristics
a. The exact value is determined by the crystal value programmed into the XTAL field of the Run-Mode Clock Configuration
b. PLL frequency is automatically calculated by the hardware based on the XTAL field of the RCC register.
Table 18-7. Clock Characteristics
I
Parameter
Parameter
f
f
f
T
f
DD_DEEPSLEEP
ref_crystal
ref_ext
pll
IOSC
READY
Parameter
Parameter
T
PE
T
pin
T
ERASE
(RCC) register.
T
PROG
RET
ME
CYC
Parameter Name
Number of guaranteed program/erase cycles before failure
Data retention at average operating temperature of 85˚C
Word program time
Page erase time
Mass erase time
Parameter Name
Crystal reference
External clock reference
PLL frequency
PLL lock time
Parameter Name
Deep-Sleep mode
Parameter Name
Internal oscillator frequency
GND
C
L
b
= 50 pF
a
a
3.579545
3.579545
Min
Conditions
LDO = 2.25 V
Peripherals = All OFF
System Clock = MOSC/16
-
-
Preliminary
Nom
200
-
-
-
8.192
8.192
Max
0.5
-
MHz
MHz
MHz
Unit
ms
a
1000
Min
200
10
20
20
Nom
Nom
950
-
-
-
-
-
Min
Max
7
1150
Max
-
-
-
-
-
Nom
12
cycles
years
Unit
Unit
ms
ms
µs
μA
Max
22
October 01, 2007
MHz
Unit