LM3S600-IQN20-A0T Bookham Technology, Inc., LM3S600-IQN20-A0T Datasheet - Page 112
![no-image](/images/no-image-200.jpg)
LM3S600-IQN20-A0T
Manufacturer Part Number
LM3S600-IQN20-A0T
Description
Microcontroller
Manufacturer
Bookham Technology, Inc.
Datasheet
1.LM3S600-IQN20-A0T.pdf
(378 pages)
- Current page: 112 of 378
- Download datasheet (4Mb)
Internal Memory
112
Bit/Field
1
0
ERASE
WRITE
Name
Type
R/W
R/W
Reset
0
0
Preliminary
Description
Erase a Page of Flash Memory
If this bit is set, the page of flash main memory as specified by the
contents of FMA is erased. A write of 0 has no effect on the state of this
bit.
If read, the state of the previous erase access is provided. If the previous
erase access is complete, a 0 is returned; otherwise, if the previous
erase access is not complete, a 1 is returned.
This can take up to 25 ms.
Write a Word into Flash Memory
If this bit is set, the data stored in FMD is written into the location as
specified by the contents of FMA. A write of 0 has no effect on the state
of this bit.
If read, the state of the previous write update is provided. If the previous
write access is complete, a 0 is returned; otherwise, if the write access
is not complete, a 1 is returned.
This can take up to 50 µs.
October 01, 2007
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