MT48LC128M4A2TG MICRON [Micron Technology], MT48LC128M4A2TG Datasheet - Page 32

• Manufacturer Part Number: MT48LC128M4A2TG
• Description: SYNCHRONOUS DRAM
• Manufacturer: MICRON [Micron Technology]

ABSOLUTE MAXIMUM RATINGS*
Voltage on V
Voltage on Inputs, NC or I/O Pins
Operating Temperature,
Storage Temperature (plastic) ............ -55°C to +150°C
Power Dissipation ................................................... 1W
DC ELECTRICAL CHARACTERISTICS AND OPERATING CONDITIONS
(Notes: 1, 5, 6; notes appear on page 35) (V
I
(Notes: 1, 5, 6, 11, 13; notes appear on page 35) (V
512Mb: x4, x8, x16 SDRAM
512MSDRAM_D.p65 – Rev. D; Pub 1/02
DD
Relative to V
Relative to V
T
PARAMETER/CONDITION
Supply Voltage
Input High Voltage: Logic 1; All inputs
Input Low Voltage: Logic 0; All inputs
Input Leakage Current:
Any input 0V ≤ V
(All other pins not under test = 0V)
Output Leakage Current: DQs are disabled;
0V ≤ V
Output Levels:
Output High Voltage (I
Output Low Voltage (I
PARAMETER/CONDITION
Operating Current: Active Mode;
Burst = 1; READ or WRITE;
Standby Current: Power-Down Mode;
CKE = LOW; All banks idle
Standby Current: Active Mode; CS# = HIGH;
CKE = HIGH; All banks active after
No accesses in progress
Operating Current: Burst Mode; Continuous burst;
READ or WRITE; All banks active
Auto Refresh Current:
CS# = HIGH; CKE = HIGH
Self Refresh Current: CKE ≤ 0.2V
A
(Commercial) ................................... 0°C to +70°C
SPECIFICATIONS AND CONDITIONS
OUT
≤ V
DD
SS
SS
, V
DD
....................................... -1V to +4.6V
....................................... -1V to +4.6V
Q
DD
IN
Q Supply
≤ V
DD
OUT
OUT
= 4mA)
t
= -4mA)
RC =
t
RC (MIN)
t
RCD met;
DD
, V
DD
Q = +3.3V ±0.3V)
t
t
Standard
Low power (L)
RFC =
RFC = 7.81µs
DD
, V
32
DD
t
RFC (MIN)
Q = +3.3V ±0.3V)
*Stresses greater than those listed under “Absolute
Maximum Ratings” may cause permanent damage to
the device. This is a stress rating only, and functional
operation of the device at these or any other conditions
above those indicated in the operational sections of
this specification is not implied. Exposure to absolute
maximum rating conditions for extended periods may
affect reliability.
Micron Technology, Inc., reserves the right to change products or specifications without notice.
V
SYMBOL
SYMBOL
DD
I
I
I
I
I
I
I
I
V
V
, V
V
V
I
DD
DD
DD
DD
DD
DD
DD
DD
OZ
I
OH
OL
IH
I
IL
1
2
3
4
5
6
7
7
DD
Q
MIN
512Mb: x4, x8, x16
TBD
TBD
TBD
TBD
TBD
TBD
TBD
TBD
-0.3
-7E
2.4
-5
-5
3
2
–
MAX
V
DD
MAX
TBD
TBD
TBD
TBD
TBD
TBD
TBD
TBD
3.6
0.8
0.4
-75
5
5
–
+ 0.3
©2000, Micron Technology, Inc.
UNITS NOTES
UNITS NOTES
SDRAM
ADVANCE
mA
mA
mA
mA
mA
mA
mA
mA
µA
µA
V
V
V
V
V
18, 19,
19, 29
19, 29
19, 29
3, 18,
3, 12,
3, 18,
3, 12,
29,30
22
22
26
26
29
4