MT48LC128M4A2TG MICRON [Micron Technology], MT48LC128M4A2TG Datasheet - Page 3

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MT48LC128M4A2TG

Manufacturer Part Number
MT48LC128M4A2TG
Description
SYNCHRONOUS DRAM
Manufacturer
MICRON [Micron Technology]
Datasheet
TABLE OF CONTENTS
Functional Block Diagram – 128 Meg x 4 ....................
Functional Block Diagram – 64 Meg x 8 ...................
Functional Block Diagram – 32 Meg x 16 .................
Pin Descriptions ...........................................................
Functional Description ...............................................
Commands .................................................................... 11
Operation ...................................................................... 14
512Mb: x4, x8, x16 SDRAM
512MSDRAM_D.p65 – Rev. D; Pub 1/02
Initialization ............................................................
Register Definition ..................................................
Truth Table 1 (Commands and DQM Operation)
Command Inhibit ................................................... 12
No Operation (NOP) ............................................... 12
Load Mode Register ................................................ 12
Active ....................................................................... 12
Read ....................................................................... 12
Write ....................................................................... 12
Precharge ................................................................. 12
Auto Precharge ........................................................ 12
Burst Terminate ...................................................... 13
Auto Refresh ............................................................ 13
Self Refresh .............................................................. 13
Bank/Row Activation .............................................. 14
Reads ....................................................................... 16
Writes ....................................................................... 21
Precharge ................................................................. 23
Power-Down ............................................................ 23
Clock Suspend ......................................................... 24
Mode Register ....................................................
Burst Length .................................................
Burst Type ....................................................
CAS Latency ................................................. 10
Operating Mode ........................................... 10
Write Burst Mode ......................................... 10
............ 11
4
5
6
7
8
8
8
8
8
9
3
Absolute Maximum Ratings ........................................ 32
DC Electrical Characteristics and Operating
I
Capacitance ................................................................... 33
AC Electrical Characteristics (Timing Table) ............ 33
Timing Waveforms
DD
Burst Read/Single Write ......................................... 24
Concurrent Auto Precharge ................................... 25
Truth Table 2 (CKE)
Truth Table 3 (Current State, Same Bank)
Truth Table 4 (Current State, Different Bank)
Conditions ................................................................ 32
Initialize and Load Mode Register ......................... 36
Power-Down Mode ................................................. 37
Clock Suspend Mode .............................................. 38
Auto Refresh Mode ................................................. 39
Self Refresh Mode ................................................... 40
Reads
Writes
Specifications and Conditions .............................. 32
Micron Technology, Inc., reserves the right to change products or specifications without notice.
Read – Without Auto Precharge ....................... 41
Read – With Auto Precharge ............................. 42
Single Read – Without Auto Precharge ............ 43
Single Read – With Auto Precharge ................. 44
Alternating Bank Read Accesses ...................... 45
Read – Full-Page Burst ...................................... 46
Read – DQM Operation .................................... 47
Write – Without Auto Precharge ...................... 48
Write – With Auto Precharge ............................ 49
Single Write – Without Auto Precharge ........... 50
Single Write – With Auto Precharge ................. 51
Alternating Bank Write Accesses ..................... 52
Write – Full-Page Burst ..................................... 53
Write – DQM Operation .................................... 54
..................................................... 27
512Mb: x4, x8, x16
...................... 28
©2000, Micron Technology, Inc.
................. 30
SDRAM
ADVANCE

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