tmp1940cyaf TOSHIBA Semiconductor CORPORATION, tmp1940cyaf Datasheet - Page 450

• Manufacturer Part Number: tmp1940cyaf
• Description: 32-bit Tx System Risc Tx19 Family
• Manufacturer: TOSHIBA Semiconductor CORPORATION

4.4
4.5
4.4.1
4.4.2
I
V
V
I
I
V
V
I
Symbol
Symbol
DDO1
LI
LO
DDO1
IH
IL
OH
OL
DC Electrical Characteristics (3/3)
Precautions for Programming and Erasing the Flash Memory
DC Electrical Characteristics in Modes Except Programmer Mode
DC Electrical Characteristics in Programmer Mode
Active write current
High-level input voltage
Low-level input voltage
Input leakage current
Output leakage current
High-level output voltage
Low-level output voltage
Active write current
In on-board programming modes (Single Boot mode and User Boot mode), the flash program and
erase operations must be given the highest priority. All interrupts including NMI must be disabled.
An auto erase operation is required before performing an auto program operation on addresses that
have already been programmed.
It is recommended to perform an auto erase operation followed by an auto program operation when
re-programming the flash memory using programming equipment once it has been programmed or
erased in an on-board programming mode.
Ta = 40 to 85 C (0 to 70 C during program and erase of the flash memory), V
Parameter
Parameter
TMP1940FDBF-92
f
0 V
0 V
I
I
I
t
sys
OH
OH
OL
CYC
Condition
Condition
= 4.0 mA
= 0.1 mA
= 2.5 mA
= t
32 MHz
V
V
IN
OUT
RC
(min)
V
CC
V
CC
0.85
0.7
V
(Ta = 25
CC
Min
Min
0.3
V
V
0.4
CC
CC
TMP1940FDBF
5°C, VCC = 2.7 to 3.6 V)
V
CC
Max
Max
150
0.8
0.4
50
CC
+ 0.5
1
1
= 2.7 to 3.6 V)
Unit
Unit
mA
mA
V
V
V
V
A
A