UPD78F0138HGK-9ET-A Renesas Electronics America, UPD78F0138HGK-9ET-A Datasheet - Page 512

• Manufacturer Part Number: UPD78F0138HGK-9ET-A
• Description: MCU 8BIT 60K FLASH 64TQFP
• Manufacturer: Renesas Electronics America
• Series: 78K0/Kx1+r

Specifications of UPD78F0138HGK-9ET-A

• Core Processor: 78K/0
• Core Size: 8-Bit
• Speed: 16MHz
• Connectivity: 3-Wire SIO, LIN, UART/USART
• Peripherals: LVD, POR, PWM, WDT
• Number Of I /o: 42
• Program Memory Size: 60KB (60K x 8)
• Program Memory Type: FLASH
• Ram Size: 2K x 8
• Voltage - Supply (vcc/vdd): 2.5 V ~ 5.5 V
• Data Converters: A/D 8x10b
• Oscillator Type: Internal
• Operating Temperature: -40°C ~ 85°C
• Package / Case: *
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Eeprom Size: -

Flash Memory Programming Characteristics
(T
Basic characteristics
Notes 1.
510
V
Unit erase time
Erase time
Write time
Number of rewrites per chip
A
DD
= 10 to +65 C, 2.7 V
supply current
2.
3.
4.
Note 2
Parameter
Time required for one erasure execution
The total time for repetition of the unit erase time (255 times max.) until the data is erased completely.
Note that the prewrite time and the erase verify time (writeback time) before data erasure are not
included.
Number of rewrites per block
If a block erasure is executed after word units of data are written 512 times to a block (2 KB), it is
considered as one rewrite. Overwriting the same address without erasing the data in it is prohibited.
Note 1
All blocks
Block unit
CHAPTER 30 ELECTRICAL SPECIFICATIONS ((A1) GRADE PRODUCTS)
Note 3
V
DD
I
T
T
T
C
T
Symbol
5.5 V, 2.7 V
DD
erass
eraca
erasa
wrwa
erwr
f
1 erase + 1 write after erase = 1 rewrite
XP
= 16 MHz, V
User’s Manual U16899EJ3V0UD
AV
REF
Conditions
DD
V
DD
= 5.5 V
, V
SS
= AV
SS
= 0 V)
Note 4
MIN.
TYP.
0.01
0.01
10
50
MAX.
2.55
2.55
500
100
32
Times
Unit
mA
ms
s
s
s