DF70844AD80FPV Renesas Electronics America, DF70844AD80FPV Datasheet - Page 1282

IC SUPERH MCU FLASH 112LQFP

DF70844AD80FPV

Manufacturer Part Number
DF70844AD80FPV
Description
IC SUPERH MCU FLASH 112LQFP
Manufacturer
Renesas Electronics America
Series
SuperH® SH7080r
Datasheet

Specifications of DF70844AD80FPV

Core Size
32-Bit
Program Memory Size
256KB (256K x 8)
Core Processor
SH-2
Speed
80MHz
Connectivity
EBI/EMI, FIFO, I²C, SCI, SSU
Peripherals
DMA, POR, PWM, WDT
Number Of I /o
76
Program Memory Type
FLASH
Ram Size
16K x 8
Voltage - Supply (vcc/vdd)
3 V ~ 5.5 V
Data Converters
A/D 8x10b
Oscillator Type
Internal
Operating Temperature
-40°C ~ 85°C
Package / Case
112-LQFP
No. Of I/o's
76
Ram Memory Size
16KB
Cpu Speed
80MHz
Digital Ic Case Style
LQFP
Supply Voltage Range
3V To 3.6V, 4.5V To 5.5V
Embedded Interface Type
I2C, SCI
Rohs Compliant
Yes
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
For Use With
R0K570865S001BE - KIT STARTER FOR SH7086R0K570865S000BE - KIT STARTER FOR SH7086HS0005KCU11H - EMULATOR E10A-USB H8S(X),SH2(A)
Eeprom Size
-
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
DF70844AD80FPV
Manufacturer:
Renesas Electronics America
Quantity:
10 000
Company:
Part Number:
DF70844AD80FPV
Quantity:
5 000
Section 23 Flash Memory
(2) Download of On-Chip Program
(3) Initialization of Programming/Erasing
(4) Programming/Erasing Execution
(5) When Programming/Erasing is Executed Consecutively
Rev. 3.00 May 17, 2007 Page 1224 of 1582
REJ09B0181-0300
The on-chip program is automatically downloaded by clearing VBR of the CPU to
H'84000000 and then setting the SCO bit in the flash code control and status register (FCCS)
and the flash key code register (FKEY), which are programming/erasing interface registers.
The user MAT is replaced to the embedded program storage area when downloading. Since the
flash memory cannot be read when programming/erasing, the procedure program, which is
working from download to completion of programming/erasing, must be executed in a space
other than the flash memory to be programmed/erased (for example, on-chip RAM).
Since the result of download is returned to the programming/erasing interface parameters,
whether the normal download is executed or not can be confirmed.
Note that VBR can be changed after download is completed.
The operating frequency and user branch are set before execution of programming/erasing.
The user branch destination must be in an area other than the user MAT area which is in the
middle of programming and the area where the on-chip program is downloaded. These settings
are performed by using the programming/erasing interface parameters.
To program or erase, the FWE pin must be brought high and user program mode must be
entered.
The program data/programming destination address is specified in 128-byte units when
programming.
The block to be erased is specified in erase-block units when erasing.
These specifications are set by using the programming/erasing interface parameters and the on-
chip program is initiated. The on-chip program is executed by using the JSR or BSR
instruction to perform the subroutine call of the specified address in the on-chip RAM. The
execution result is returned to the programming/erasing interface parameters.
The area to be programmed must be erased in advance when programming flash memory.
There are limitations and notes on the interrupt processing during programming/erasing. For
details, see section 23.8.2, Interrupts during Programming/Erasing.
When the processing is not ended by the 128-byte programming or one-block erasure, the
program address/data and erase-block number must be updated and consecutive
programming/erasing is required.
Since the downloaded on-chip program is left in the on-chip RAM after the processing,
download and initialization are not required when the same processing is executed
consecutively.

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