C8051F902-GM Silicon Laboratories Inc, C8051F902-GM Datasheet - Page 56

• Manufacturer Part Number: C8051F902-GM
• Description: IC MCU 8BIT 8KB FLASH 24QFN
• Manufacturer: Silicon Laboratories Inc
• Series: C8051F9xxr

Specifications of C8051F902-GM

• Program Memory Type: FLASH
• Program Memory Size: 8KB (8K x 8)
• Package / Case: 24-QFN
• Core Processor: 8051
• Core Size: 8-Bit
• Speed: 25MHz
• Connectivity: SMBus (2-Wire/I²C), SPI, UART/USART
• Peripherals: Brown-out Detect/Reset, POR, PWM, Temp Sensor, WDT
• Number Of I /o: 16
• Ram Size: 768 x 8
• Voltage - Supply (vcc/vdd): 0.9 V ~ 3.6 V
• Data Converters: A/D 15x10/12b
• Oscillator Type: Internal
• Operating Temperature: -40°C ~ 85°C
• Processor Series: C8051F9x
• Core: 8051
• Data Ram Size: 768 B
• Interface Type: UART
• Maximum Clock Frequency: 25 MHz
• Number Of Timers: 4
• Operating Supply Voltage: 0.9 V to 3.6 V
• Maximum Operating Temperature: + 85 C
• Mounting Style: SMD/SMT
• 3rd Party Development Tools: PK51, CA51, A51, ULINK2
• Development Tools By Supplier: C8051F912DK
• Minimum Operating Temperature: - 40 C
• On-chip Adc: 12 bit
• Package: 24QFN EP
• Device Core: 8051
• Family Name: C8051F90x
• Maximum Speed: 25 MHz
• Data Bus Width: 8 Bit
• Number Of Programmable I/os: 16
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Eeprom Size: -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: 336-1848-5

C8051F91x-C8051F90x
Table 4.12. Voltage Reference Electrical Characteristics
V
56
Internal High Speed Reference (REFSL[1:0] = 11)
Output Voltage
VREF Turn-on Time
Supply Current
Internal Precision Reference (REFSL[1:0] = 00, REFOE = 1)
Output Voltage
VREF Short-Circuit Current
Load Regulation
VREF Turn-on Time 1
VREF Turn-on Time 2
VREF Turn-on Time 3
Supply Current
External Reference (REFSL[1:0] = 00, REFOE = 0)
Input Voltage Range
Input Current
Note:
DD
= 1.8 to 3.6 V,
Blue
Parameter
indicates a feature only available on ‘F912 and ‘F902 devices.
–
40 to +85 °C unless otherwise specified.
no bypass cap, settling to 0.5 LSB
0.1 µF ceramic bypass, settling to
Sample Rate = 300 ksps; VREF =
4.7 µF tantalum, 0.1 µF ceramic
Load = 0 to 200 µA to AGND
bypass, settling to 0.5 LSB
Normal Power Mode
Low Power Mode
V
V
–40 to +85 °C,
–40 to +85 °C,
DD
DD
Conditions
0.5 LSB
= 1.8–3.6 V
= 1.8–3.6 V
3.0 V
Rev. 1.0
1.645
1.60
Min
—
—
—
—
—
—
—
—
—
—
0
1.680
1.65
5.25
Typ
260
140
400
300
10
15
25
15
—
—
1.715
Max
1.70
V
1.5
—
—
—
—
—
—
—
—
—
DD
µV/µA
Units
mA
ms
µA
µA
µA
µs
µs
µs
V
V
V