C8051F902-GM Silicon Laboratories Inc, C8051F902-GM Datasheet - Page 133

• Manufacturer Part Number: C8051F902-GM
• Description: IC MCU 8BIT 8KB FLASH 24QFN
• Manufacturer: Silicon Laboratories Inc
• Series: C8051F9xxr

Specifications of C8051F902-GM

• Program Memory Type: FLASH
• Program Memory Size: 8KB (8K x 8)
• Package / Case: 24-QFN
• Core Processor: 8051
• Core Size: 8-Bit
• Speed: 25MHz
• Connectivity: SMBus (2-Wire/I²C), SPI, UART/USART
• Peripherals: Brown-out Detect/Reset, POR, PWM, Temp Sensor, WDT
• Number Of I /o: 16
• Ram Size: 768 x 8
• Voltage - Supply (vcc/vdd): 0.9 V ~ 3.6 V
• Data Converters: A/D 15x10/12b
• Oscillator Type: Internal
• Operating Temperature: -40°C ~ 85°C
• Processor Series: C8051F9x
• Core: 8051
• Data Ram Size: 768 B
• Interface Type: UART
• Maximum Clock Frequency: 25 MHz
• Number Of Timers: 4
• Operating Supply Voltage: 0.9 V to 3.6 V
• Maximum Operating Temperature: + 85 C
• Mounting Style: SMD/SMT
• 3rd Party Development Tools: PK51, CA51, A51, ULINK2
• Development Tools By Supplier: C8051F912DK
• Minimum Operating Temperature: - 40 C
• On-chip Adc: 12 bit
• Package: 24QFN EP
• Device Core: 8051
• Family Name: C8051F90x
• Maximum Speed: 25 MHz
• Data Bus Width: 8 Bit
• Number Of Programmable I/os: 16
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Eeprom Size: -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: 336-1848-5

13.1.2. Flash Erase Procedure
The Flash memory is organized in 512-byte pages. The erase operation applies to an entire page (setting
all bytes in the page to 0xFF). To erase an entire Flash page, perform the following steps:
Steps 4–6 must be repeated for each 512-byte page to be erased.
Notes:
13.1.3. Flash Write Procedure
A write to Flash memory can clear bits to logic 0 but cannot set them; only an erase operation can set bits
to logic 1 in Flash. A byte location to be programmed should be erased before a new value is written.
The recommended procedure for writing a single byte in Flash is as follows:
Steps 5–7 must be repeated for each byte to be written.
Notes:
13.2. Non-volatile Data Storage
The Flash memory can be used for non-volatile data storage as well as program code. This allows data
such as calibration coefficients to be calculated and stored at run time. Data is written using the MOVX
write instruction and read using the MOVC instruction. MOVX read instructions always target XRAM.
An additional 512-byte scratchpad is available for non-volatile data storage. It is accessible at addresses
0x0000 to 0x01FF when SFLE is set to 1. The scratchpad area cannot be used for code execution.
1. To maintain code compatibility with the ‘F93x-’F92x product family, the erase procedure should be performed
2. Flash security settings may prevent erasure of some Flash pages, such as the reserved area and the page
3. 8-bit MOVX instructions cannot be used to erase or write to Flash memory at addresses higher than 0x00FF.
1. Flash security settings may prevent writes to some areas of Flash, such as the reserved area. For a summary
2. 8-bit MOVX instructions cannot be used to erase or write to Flash memory at addresses higher than 0x00FF.
on two consecutive 512-byte sections of memory at a time. This allows the same software to run on devices
with 1024-byte or 512-byte Flash pages. Using this technique, devices with 1024-byte Flash pages will have
each Flash page erased twice.
containing the lock bytes. For a summary of Flash security settings and restrictions affecting Flash erase
operations, please see Section “13.3. Security Options” on page 134.
of Flash security settings and restrictions affecting Flash write operations, please see Section “13.3. Security
Options” on page 134.
1. Save current interrupt state and disable interrupts.
2. Set the PSEE bit (register PSCTL).
3. Set the PSWE bit (register PSCTL).
4. Write the first key code to FLKEY: 0xA5.
5. Write the second key code to FLKEY: 0xF1.
6. Using the MOVX instruction, write a data byte to any location within the page to be erased.
7. Clear the PSWE and PSEE bits.
8. Restore previous interrupt state.
1. Save current interrupt state and disable interrupts.
2. Ensure that the Flash byte has been erased (has a value of 0xFF).
3. Set the PSWE bit (register PSCTL).
4. Clear the PSEE bit (register PSCTL).
5. Write the first key code to FLKEY: 0xA5.
6. Write the second key code to FLKEY: 0xF1.
7. Using the MOVX instruction, write a single data byte to the desired location within the 1024-
8. Clear the PSWE bit.
9. Restore previous interrupt state.
byte sector.
Rev. 1.0
C8051F91x-C8051F90x
133