UPD78F0034BGC-8BS-A Renesas Electronics America, UPD78F0034BGC-8BS-A Datasheet - Page 509

• Manufacturer Part Number: UPD78F0034BGC-8BS-A
• Description: MCU 8-Bit 78K0 CISC 32KB Flash 2.5V/3.3V/5V 64-Pin LQFP
• Manufacturer: Renesas Electronics America

Specifications of UPD78F0034BGC-8BS-A

• Package: 64LQFP
• Family Name: 78K0
• Maximum Speed: 12 MHz
• Ram Size: 1 KB
• Program Memory Size: 32 KB
• Operating Supply Voltage: 2.5|3.3|5 V
• Data Bus Width: 8 Bit
• Program Memory Type: Flash
• Number Of Programmable I/os: 51
• Interface Type: 3-Wire/UART
• On-chip Adc: 8-chx10-bit
• Operating Temperature: -40 to 85 °C
• Number Of Timers: 3

Flash Memory Programming Characteristics (1/2)
(T
CHAPTER 25 ELECTRICAL SPECIFICATIONS (EXPANDED-SPECIFICATION PRODUCTS: f
Operating frequency
V
V
V
Step erase time
Overall erase time
Writeback time
Number of writebacks per
writeback command
Number of erases/writebacks
Step write time
Overall write time per word
Number of rewrites per chip
A
PP
DD
PP
Notes 1. AV
= +10 to +40 C, V
(a) Write erase characteristics
supply voltage
supply current
supply current
PD78F0034B, 78F0034B(A)
2. The recommended setting value of the step erase time is 0.2 s.
3. The prewrite time before erasure and the erase verify time (writeback time) are not included.
4. The recommended setting value of the writeback time is 50 ms.
5. Writeback is executed once by the issuance of the writeback command. Therefore, the number of retries
6. The recommended setting value of the step write time is 50 s.
7. The actual write time per word is 100 s longer. The internal verify time during or after a write is not
8. When a product is first written after shipment, “erase
Parameter
must be the maximum value minus the number of commands issued.
included.
rewrite.
Example:
Note 4
Note 6
Note 2
DD
Note 1
Note 3
Note 5
current and port current (current that flows through the internal pull-up resistor) are not included.
DD
P: Write, E: Erase
Shipped product
Shipped product
Note 7
Note 8
= AV
DD
Symbol
f
V
I
I
T
T
T
C
C
T
T
C
X
DD
PP
= 1.8 to 5.5 V, V
er
era
wb
wr
wrw
PP2
wb
erwb
erwr
User’s Manual U14046EJ5V0UD
When
V
E P E P E P: 3 rewrites
4.5 V
3.0 V
2.7 V
1.8 V
During flash memory programming
When V
When step erase time = 0.2 s
When writeback time = 50 ms
When step write time = 50 s (1 word = 1 byte)
1 erase + 1 write after erase = 1 rewrite
PP
= V
P E P E P: 3 rewrites
PP2
V
V
V
V
PP
DD
DD
DD
DD
= V
10 MHz crystal
oscillation
operating mode
8.38 MHz crystal V
oscillation
operating mode
SS
< 4.5 V
< 3.0 V
< 2.7 V
Conditions
5.5 V
PP2
= AV
SS
V
V
DD
DD
DD
= 0 V)
= 5.0 V 10%
= 5.0 V 10%
= 3.0 V 10%
write” and “write only” are both taken as one
0.199
MIN.
49.4
1.0
1.0
1.0
1.0
9.7
48
48
TYP.
10.0
0.2
50
50
X
= 1.0 TO 12 MHz)
MAX.
0.201
10.0
8.38
5.00
1.25
10.3
50.6
100
520
30
24
17
20
60
16
52
20
Times/area
s/chip
Times
Times
MHz
MHz
MHz
MHz
Unit
mA
mA
mA
mA
ms
V
s
s
s
507