UPD78F0034BGC-8BS-A Renesas Electronics America, UPD78F0034BGC-8BS-A Datasheet - Page 540

• Manufacturer Part Number: UPD78F0034BGC-8BS-A
• Description: MCU 8-Bit 78K0 CISC 32KB Flash 2.5V/3.3V/5V 64-Pin LQFP
• Manufacturer: Renesas Electronics America

Specifications of UPD78F0034BGC-8BS-A

• Package: 64LQFP
• Family Name: 78K0
• Maximum Speed: 12 MHz
• Ram Size: 1 KB
• Program Memory Size: 32 KB
• Operating Supply Voltage: 2.5|3.3|5 V
• Data Bus Width: 8 Bit
• Program Memory Type: Flash
• Number Of Programmable I/os: 51
• Interface Type: 3-Wire/UART
• On-chip Adc: 8-chx10-bit
• Operating Temperature: -40 to 85 °C
• Number Of Timers: 3

Flash Memory Programming Characteristics (1/3)
(T
538
Set time from V
Release time from V
V
RESET
V
V
RESET
V
V
Operating frequency
V
V
V
Step erase time
Overall erase time
Step write time
Overall write time per word
Number of rewrites per chip
A
(1) PD78F0034A, 78F0034AY
PP
DD
PP
Notes 1. Product rank “K, E, P” indicates 10.2 V (MIN.), 10.3 V (TYP.), and 10.4 V (MAX.).
PP
PP
PP
PP
PP
= +10 to +40 C, V
(b) Serial write operation characteristics
supply voltage
supply current
pulse input start time from
pulse high-/low-level width
pulse input end time from
pulse low-level input voltage
pulse high-level input voltage
supply current
CHAPTER 26 ELECTRICAL SPECIFICATIONS (CONVENTIONAL PRODUCTS: f
(a) Write erase characteristics
2. AV
3. The recommended setting value of the step erase time is 1 s.
4. The prewrite time before erasure and the erase verify time are not included.
5. The recommended setting value of the step write time is 50 s.
6. The actual write time per word is 100 s longer. The internal verify time during or after a write is not
7. When a product is first written after shipment, “erase
8. Product rank “K, E” indicates one time (MAX.).
Parameter
Parameter
included.
rewrite.
Example:
Note 5
DD
Note 3
DD
Note 2
Note 4
to V
current and port current (current that flows through the internal pull-up resistor) are not included.
PP
PP
to RESET
DD
Note 6
P: Write, E: Erase
Shipped product
Shipped product
Note 7
= AV
DD
Symbol
Symbol
f
V
I
I
T
T
T
T
C
t
t
t
t
t
V
V
X
DD
PP
= 2.7 to 5.5 V, V
DP
PR
RP
PW
RPE
PP2
er
era
wr
wrw
erwr
PPL
PPH
User’s Manual U14046EJ5V0UD
When
V
E P E P E P: 3 rewrites
4.0 V
2.7 V
During flash memory
programming
When V
When step erase time = 1 s
When step write time = 100 s (1 word = 1 byte)
1 erase + 1 write after erase = 1 rewrite
PP
= V
P E P E P: 3 rewrites
PP2
V
V
PP
DD
DD
= V
8.38 MHz crystal V
oscillation
operating mode
5.0 MHz crystal V
oscillation
operating mode
SS
< 4.0 V
Conditions
Conditions
Note 1
5.5 V
PP2
= AV
SS
= 0 V)
DD
DD
= 5.0 V 10%
= 3.0 V 10%
write” and “write only” are both taken as one
0.8V
MIN.
0.99
MIN.
1.0
1.0
9.7
50
1.0
1.0
8.0
9.7
10
DD
X
= 1.0 TO 8.38 MHz)
TYP.
TYP.
10.0
10.0
1.0
V
DD
20
1.2V
MAX.
MAX.
1000
8.38
10.3
1.01
10.3
100
100
5.0
Note 8
24
12
20
20
DD
Times/area
s/chip
MHz
MHz
Unit
Unit
mA
mA
mA
ms
V
s
V
V
s
s
s
s
s
s