TMPM333FDFG Toshiba, TMPM333FDFG Datasheet - Page 385

• Manufacturer Part Number: TMPM333FDFG
• Description: Microcontrollers (MCU) MCU w/ ARM Cortex-M3 512K FLASH, 32K SRAM
• Manufacturer: Toshiba

Specifications of TMPM333FDFG

• Processor Series: TX03
• Core: ARM Cortex M3
• 3rd Party Development Tools: MDK-ARM, RL-ARM, ULINK2
• Product Summaries: Summary
• Lead Free: Yes
• Rohs Compatible Product(s): Available
• Rom (kbytes): 512K
• Rom Type: Flash
• Ram (kbytes): 32K
• Number Of Pins: 100
• Package: LQFP(14×14)
• Vcc: 3V
• Cpu Mhz: 40
• Ssp (ch) Spi: -
• I2c/sio (ch): 3
• Uart/sio (ch): 3
• Usb: -
• Can: -
• Ethernet: -
• External Bus Interface: -
• Cs/wait Controller (ch): -
• Dma Controller: -
• 10-bit Da Converter: -
• 10-bit Ad Converter: 12
• 12-bit Ad Converter: -
• 16-bit Timer / Counter: 10
• Motor / Igbt Control: -
• Real Time Clock: 1
• Watchdog Timer: Y
• Osc Freq Detect: -
• Clock Gear: Y
• Low-power Hold Function: -
• Remote Control Interface: -
• Hardware Cec Controller: -
• Comparators: -
• Low-voltage Detector: -
• Etm Hardware Trace: 4-bit
• Lead Free Status / Rohs Status: Details

15. Flash Memory Operation
15.1
15.1.1
Note:
This section describes the hardware configuration and operation of the flash memory.
Flash Memory
TMPM333FWFG
TMPM333FDFG
TMPM333FYFG
Product Name
The above values are theoretical values not including data transfer time.
The write time per chip depends on the write method to be used by the user.
Features
1. Memory capacity
2. Write/erase time
3. Programming method
4. Rewriting method
urations of each device are shown in the table below.
memory, 32-bit data bus width is used.
TMPM333FWFG contains 64 words in a page.
while it is mounted on the user's board:
except for some specific functions. Therefore, if the user is currently using an external flash memory
a. User boot mode
b. Single boot mode
The TMPM333FDFG/FYFG/FWFG devices contain flash memory. The memory sizes and config-
Independent write access to each block is available. When the CPU is to access the internal flash
Writing is executed per page. The TMPM333FDFG/TMPM333FYFG contain 128 words and the
Page writing requires 1.25ms (typical) regardless of number of words.
A block erase requires 0.1 sec. (typical).
The following table shows write and erase time per chip.
There are two types of the onboard programming mode for the user to program (rewrite) the device
・ The onboard programming mode
The flash memory included in this device is generally compliant with the applicable JEDEC standards
Memory Size
The user's original rewriting method can be supported.
The rewriting method to use serial data transfer (Toshiba's unique method) can be supported.
512 KB
256 KB
128 KB
128 KB
3
1
−
Block Configuration
64 KB
1
1
1
Page 365
32 KB
2
2
1
16 KB
−
−
2
# of Words
128
128
64
TMPM333FDFG/FYFG/FWFG
Write Time
1.28 sec
0.64 sec
0.64 sec
0.4 sec
0.4 sec
0.2 sec
Erase
Time