MT47H64M8CB-5E:B Micron Technology Inc, MT47H64M8CB-5E:B Datasheet - Page 85

• Manufacturer Part Number: MT47H64M8CB-5E:B
• Description: IC DDR2 SDRAM 512MBIT 5NS 60FBGA
• Manufacturer: Micron Technology Inc

Specifications of MT47H64M8CB-5E:B

• Format - Memory: RAM
• Memory Type: DDR2 SDRAM
• Memory Size: 512M (64M x 8)
• Speed: 5ns
• Interface: Parallel
• Voltage - Supply: 1.7 V ~ 1.9 V
• Operating Temperature: 0°C ~ 85°C
• Package / Case: 60-FBGA
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Input Electrical Characteristics and Operating Conditions
Table 22:
Table 23:
Figure 65:
PDF: 09005aef8117c18e, Source: 09005aef8211b2e6
512MbDDR2_2.fm - Rev. K 8/06 EN
Parameter
Parameter
Input HIGH (logic 1) voltage
Input LOW (logic 0) voltage
Input HIGH (logic 1) voltage (-5E/-37E)
Input HIGH (logic 1) voltage (-3/-3E/-25/-25E)
Input LOW (logic 0) voltage (-5E/-37E)
Input LOW (logic 0) voltage (-3/-3E/-25/-25E)
Input DC Logic Levels
All voltages referenced to V
Input AC Logic Levels
All voltages referenced to V
Single-Ended Input Signal Levels
Note:
1,150mV
1,025mV
936mV
918mV
900mV
882mV
864mV
775mV
650mV
Numbers in diagram reflect nominal values.
SS
SS
Input Electrical Characteristics and Operating Conditions
Symbol
Symbol
V
V
V
V
V
V
IH
IL
IH
IH
IL
IL
(
85
(
(
(
(
(
DC
DC
AC
AC
AC
AC
)
)
)
)
)
)
Micron Technology, Inc., reserves the right to change products or specifications without notice.
V
V
V
REF
REF
REF
(
–300
Min
DC
(
(
512Mb: x4, x8, x16 DDR2 SDRAM
Min
DC
DC
) + 125
–
–
) + 250
) + 200
V
V
REF
V
V
DD
REF
REF
(
Max
Q + 300
DC
©2004 Micron Technology, Inc. All rights reserved.
Max
(
(
DC
DC
) - 125
–
–
) - 250
) - 200
V
V
V
V
V
V
V
V
IH(AC)
IH(DC)
REF
REF
REF
REF
IL(DC)
IL(AC)
+ AC Noise
+ DC Error
- DC Error
- AC Noise
Units
Units
mV
mV
mV
mV
mV
mV