MT47H64M8CB-5E:B Micron Technology Inc, MT47H64M8CB-5E:B Datasheet - Page 106

• Manufacturer Part Number: MT47H64M8CB-5E:B
• Description: IC DDR2 SDRAM 512MBIT 5NS 60FBGA
• Manufacturer: Micron Technology Inc

Specifications of MT47H64M8CB-5E:B

• Format - Memory: RAM
• Memory Type: DDR2 SDRAM
• Memory Size: 512M (64M x 8)
• Speed: 5ns
• Interface: Parallel
• Voltage - Supply: 1.7 V ~ 1.9 V
• Operating Temperature: 0°C ~ 85°C
• Package / Case: 60-FBGA
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Output Electrical Characteristics and Operating Conditions
Table 37:
Figure 82:
PDF: 09005aef8117c18e, Source: 09005aef8211b2e6
512MbDDR2_2.fm - Rev. K 8/06 EN
Parameter
AC Differential Cross-Point Voltage
AC Differential Voltage Swing
Differential AC Output Parameters
Differential Output Signal Levels
Notes:
1. The typical value of V
V
V
TR
CP
and V
differential output signals must cross.
OX
(
Output Electrical Characteristics and Operating Conditions
AC
Symbol
V
V
OX
) is expected to track variations in V
SWING
(
AC
)
V
V
DD
SS
OX
V
Q
SWING
Q
(
0.50 x V
AC
) is expected to be about 0.5 x V
106
Min
1.0
DD
Q - 125
Micron Technology, Inc., reserves the right to change products or specifications without notice.
Crossing Point
V
OX
512Mb: x4, x8, x16 DDR2 SDRAM
DD
0.50 x V
Q. V
OX
Max
DD
(
AC
Q + 125
DD
) indicates the voltage at which
Q of the transmitting device
©2004 Micron Technology, Inc. All rights reserved.
Units
mV
mV
Notes
1