MT47H64M8CB-5E:B Micron Technology Inc, MT47H64M8CB-5E:B Datasheet - Page 112

• Manufacturer Part Number: MT47H64M8CB-5E:B
• Description: IC DDR2 SDRAM 512MBIT 5NS 60FBGA
• Manufacturer: Micron Technology Inc

Specifications of MT47H64M8CB-5E:B

• Format - Memory: RAM
• Memory Type: DDR2 SDRAM
• Memory Size: 512M (64M x 8)
• Speed: 5ns
• Interface: Parallel
• Voltage - Supply: 1.7 V ~ 1.9 V
• Operating Temperature: 0°C ~ 85°C
• Package / Case: 60-FBGA
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

FBGA Package Capacitance
Table 44:
PDF: 09005aef8117c18e, Source: 09005aef8211b2e6
512MbDDR2_2.fm - Rev. K 8/06 EN
Parameter
Input capacitance: CK, CK#
Delta input capacitance: CK, CK#
Input capacitance: BA1–BA0, A0–A13 (A12 x16), CS#,
RAS#, CAS#, WE#, CKE, ODT
Delta input capacitance: BA1–BA0, A0–A13 (A12
x16), CS#, RAS#, CAS#, WE#, CKE, ODT
Input/Output capacitance: DQs, DQS, DM, NF
Delta input/output capacitance: DQs, DQS, DM, NF
Input Capacitance
Notes:
1. This parameter is sampled. V
2. The input capacitance per ball group will not differ by more than this maximum amount for
3. The I/O capacitance per DQS and DQ byte/group will not differ by more than this maximum
4. Reduce MAX limit by 0.5pF for -3/-3E/-25/-25E speed devices.
5. Reduce MAX limit by 0.25pF for -3/-3E/-25/-25E speed devices.
T
balls, reflecting the fact that they are matched in loading.
any given device.
amount for any given device.
C
= 25°C, V
OUT
(
DC
) = V
DD
Symbol
CDCK
CDIO
Q/2, V
CCK
CIO
CDI
CI
112
DD
OUT
= +1.8V ±0.1V, V
(peak-to-peak) = 0.1V. DM input is grouped with I/O
Micron Technology, Inc., reserves the right to change products or specifications without notice.
Min
1.0
1.0
2.5
–
–
–
512Mb: x4, x8, x16 DDR2 SDRAM
DD
Q = +1.8V ±0.1V, V
FBGA Package Capacitance
Max
0.25
0.25
2.0
2.0
4.0
0.5
©2004 Micron Technology, Inc. All rights reserved.
Units
REF
pF
pF
pF
pF
pF
pF
= V
SS
, f = 100 MHz,
Notes
1, 4
1
2
1
2
3