MT47H64M8CB-5E:B Micron Technology Inc, MT47H64M8CB-5E:B Datasheet - Page 45

• Manufacturer Part Number: MT47H64M8CB-5E:B
• Description: IC DDR2 SDRAM 512MBIT 5NS 60FBGA
• Manufacturer: Micron Technology Inc

Specifications of MT47H64M8CB-5E:B

• Format - Memory: RAM
• Memory Type: DDR2 SDRAM
• Memory Size: 512M (64M x 8)
• Speed: 5ns
• Interface: Parallel
• Voltage - Supply: 1.7 V ~ 1.9 V
• Operating Temperature: 0°C ~ 85°C
• Package / Case: 60-FBGA
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Figure 26:
PDF: 09005aef8117c18e, Source: 09005aef8211b2e6
512MbDDR2_2.fm - Rev. K 8/06 EN
COMMAND 5
DQS, DQS#
DQS, DQS#
ADDRESS
BA0, BA1
Case 1: t AC (MIN) and t DQSCK (MIN)
Case 2: t AC (MAX) and t DQSCK (MAX)
DQ 1
DQ 1
CK#
CKE
A10
DM
CK
NOP 5
Bank Read – With Auto Precharge
T0
Notes:
Bank x
ACT
RA
T1
RA
1. DO n = data-out from column n; subsequent elements are applied in the programmed
2. BL = 4, RL = 4 (AL = 1, CL = 3) in the case shown.
3. Enable auto precharge.
4. ACT = ACTIVE, RA = row address, BA = bank address.
5. NOP commands are shown for ease of illustration; other commands may be valid at these
6. The DDR2 SDRAM internally delays auto precharge until both
7. I/0 balls, when entering or exiting HIGH-Z are not referenced to a specific voltage level, but
t CK
order.
times.
have been satisfied.
to when the device begins to drive or no longer drives, respectively.
t RCD
t RAS
t RC
NOP 5
T2
t CH
t CL
READ 2,6
Bank x
Col n
3
T3
AL = 1
prefetch
4-bit
NOP 5
T4
45
t RTP
Micron Technology, Inc., reserves the right to change products or specifications without notice.
NOP 5
T5
t LZ (MIN)
t LZ (MAX)
CL = 3
512Mb: x4, x8, x16 DDR2 SDRAM
Internal
precharge
7
NOP 5
T6
7
t RPRE
t LZ (MIN)
t LZ (MAX)
t RPRE
DON’T CARE
NOP 5
T7
t
RAS (MIN) and
t DQSCK (MIN)
©2004 Micron Technology, Inc. All rights reserved.
t RP
DO
t DQSCK (MAX)
t AC (MIN)
n
t AC (MAX)
DO
n
T7n
NOP 5
T8
TRANSITIONING DATA
t HZ (MIN)
t HZ (MAX)
t
T8n
RTP (MIN)
t RPST
t RPST
READs
Bank x
ACT
RA
7
RA
7