MT47H64M8CB-5E:B Micron Technology Inc, MT47H64M8CB-5E:B Datasheet - Page 51

• Manufacturer Part Number: MT47H64M8CB-5E:B
• Description: IC DDR2 SDRAM 512MBIT 5NS 60FBGA
• Manufacturer: Micron Technology Inc

Specifications of MT47H64M8CB-5E:B

• Format - Memory: RAM
• Memory Type: DDR2 SDRAM
• Memory Size: 512M (64M x 8)
• Speed: 5ns
• Interface: Parallel
• Voltage - Supply: 1.7 V ~ 1.9 V
• Operating Temperature: 0°C ~ 85°C
• Package / Case: 60-FBGA
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Figure 31:
PDF: 09005aef8117c18e, Source: 09005aef8211b2e6
512MbDDR2_2.fm - Rev. K 8/06 EN
WRITE Burst
Notes:
1. DI b = data-in for column b.
2. Three subsequent elements of data-in are applied in the programmed order following
3. Shown with BL = 4, AL = 0, CL = 3; thus, WL = 2.
4. A10 is LOW with the WRITE command (auto precharge is disabled).
5. Subsequent rising DQS signals must align to the clock within
COMMAND
DQS, DQS#
DQS, DQS#
DQS, DQS#
t
t
t
DQSS (NOM)
DQSS (MIN)
DQSS (MAX)
ADDRESS
DI b.
CK#
DM
DM
DM
DQ
DQ
DQ
CK
Bank a,
WRITE
Col b
T0
WL + t DQSS
WL ± t DQSS
WL - t DQSS
51
NOP
T1
DON’T CARE
Micron Technology, Inc., reserves the right to change products or specifications without notice.
DI
b
NOP
T2
DI
b
512Mb: x4, x8, x16 DDR2 SDRAM
DI
b
T2n
TRANSITIONING DATA
t DQSS
T3
NOP
5
t DQSS
5
t
DQSS.
5
©2004 Micron Technology, Inc. All rights reserved.
T3n
NOP
T4
WRITEs