MT47H64M8CB-5E:B Micron Technology Inc, MT47H64M8CB-5E:B Datasheet - Page 42

• Manufacturer Part Number: MT47H64M8CB-5E:B
• Description: IC DDR2 SDRAM 512MBIT 5NS 60FBGA
• Manufacturer: Micron Technology Inc

Specifications of MT47H64M8CB-5E:B

• Format - Memory: RAM
• Memory Type: DDR2 SDRAM
• Memory Size: 512M (64M x 8)
• Speed: 5ns
• Interface: Parallel
• Voltage - Supply: 1.7 V ~ 1.9 V
• Operating Temperature: 0°C ~ 85°C
• Package / Case: 60-FBGA
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Figure 22:
Figure 23:
PDF: 09005aef8117c18e, Source: 09005aef8211b2e6
512MbDDR2_2.fm - Rev. K 8/06 EN
READ-to-PRECHARGE – BL = 4
READ-to-PRECHARGE – BL = 8
Notes:
Notes:
COMMAND
1. RL = 4 (AL = 1, CL = 3); BL = 4.
2.
3. Shown with nominal
COMMAND
1. RL = 4 (AL = 1, CL = 3); BL = 8.
2.
3. Shown with nominal
DQS, DQS#
DQS, DQS#
ADDRESS
ADDRESS
t
t
RTP ≥ 2 clocks.
RTP ≥ 2 clocks.
CK#
A10
CK#
A10
DQ
DQ
CK
CK
Bank a
READ
Bank a
READ
T0
T0
AL + BL/2 + MAX( t RTP/ t CK or 2CK) - 2CK
AL = 1
AL = 1
first 4-bit
prefetch
NOP
T1
prefetch
4-bit
NOP
T1
t
t
AC,
AL + BL/2 + MAX( t RTP/ t CK or 2CK) -2CK
AC,
≥ t RAS (MIN)
≥ t RAS (MIN)
t
t
NOP
DQSCK, and
DQSCK, and
T2
≥ t RTP (MIN)
CL = 3
42
NOP
T2
second 4-bit
CL = 3
≥ t RC (MIN)
prefetch
NOP
T3
Micron Technology, Inc., reserves the right to change products or specifications without notice.
≥ t RC (MIN)
PRECHG
t
t
Bank a
DQSQ.
DQSQ.
Valid
T3
≥ t RTP (MIN)
512Mb: x4, x8, x16 DDR2 SDRAM
NOP
T4
D
OUT
NOP
T4
D
OUT
D
Bank a
PRECHG
OUT
Valid
T5
≥ t RP (MIN)
D
OUT
TRANSITIONING DATA
D
OUT
D
NOP
T5
OUT
TRANSITIONING DATA
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NOP
D
T6
OUT
D
OUT
≥ t RP (MIN)
D
OUT
D
ACTIVE
Bank a
OUT
Valid
T6
NOP
T7
D
OUT
DON’T CARE
D
DON’T CARE
READs
OUT
ACTIVE
Bank a
Valid
NOP
T8
T7