MT47H64M8CB-5E:B Micron Technology Inc, MT47H64M8CB-5E:B Datasheet - Page 101

• Manufacturer Part Number: MT47H64M8CB-5E:B
• Description: IC DDR2 SDRAM 512MBIT 5NS 60FBGA
• Manufacturer: Micron Technology Inc

Specifications of MT47H64M8CB-5E:B

• Format - Memory: RAM
• Memory Type: DDR2 SDRAM
• Memory Size: 512M (64M x 8)
• Speed: 5ns
• Interface: Parallel
• Voltage - Supply: 1.7 V ~ 1.9 V
• Operating Temperature: 0°C ~ 85°C
• Package / Case: 60-FBGA
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Figure 74:
PDF: 09005aef8117c18e, Source: 09005aef8211b2e6
512MbDDR2_2.fm - Rev. K 8/06 EN
Tangent Line for
Notes:
V
V
1. DQS, DQS# signals must be monotonic between V
V
V
IL
IL
IH
IH
(
(
DC
AC
(
(
AC
DC
V
) MAX
) MAX
DQS#
REF
) MIN
) MIN
V
DQS
DD
(
V
DC
t
Q
SS
DH
1
1
)
Hold Slew Rate
Rising Signal
DC to V
region
REF
=
tangent line [V
101
t IS
Tangent
line
ΔTR
REF
(
DC
) - V
IL
(
t IH
DC
Micron Technology, Inc., reserves the right to change products or specifications without notice.
) MAX]
ΔTR
512Mb: x4, x8, x16 DDR2 SDRAM
Hold Slew Rate
Falling Signal
IL
(
DC
Nominal line
) MAX and V
Input Slew Rate Derating
=
tangent line [V
t IS
©2004 Micron Technology, Inc. All rights reserved.
Tangent
line
IH
DC to V
region
(
DC
t IH
ΔTF
) MIN.
IH
REF
(
DC
) MIN - V
ΔTF
Nominal
line
REF
(
DC
)]