MT47H64M8CB-5E:B Micron Technology Inc, MT47H64M8CB-5E:B Datasheet - Page 56

• Manufacturer Part Number: MT47H64M8CB-5E:B
• Description: IC DDR2 SDRAM 512MBIT 5NS 60FBGA
• Manufacturer: Micron Technology Inc

Specifications of MT47H64M8CB-5E:B

• Format - Memory: RAM
• Memory Type: DDR2 SDRAM
• Memory Size: 512M (64M x 8)
• Speed: 5ns
• Interface: Parallel
• Voltage - Supply: 1.7 V ~ 1.9 V
• Operating Temperature: 0°C ~ 85°C
• Package / Case: 60-FBGA
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Figure 38:
PDF: 09005aef8117c18e, Source: 09005aef8211b2e6
512MbDDR2_2.fm - Rev. K 8/06 EN
COMMAND 5
DQS, DQS#
ADDRESS
BA0, BA1
DQ 1
CK#
CKE
A10
DM
CK
NOP 6
Bank Write – without Auto Precharge
T0
Notes:
Bank x
ACT
RA
RA
T1
1. DI n = data-in from column n; subsequent elements are applied in the programmed order.
2. BL = 4, AL = 0, and WL = 2 in the case shown.
3. Disable auto precharge.
4. “Don’t Care” if A10 is HIGH at T9.
5. PRE = PRECHARGE, ACT = ACTIVE, RA = row address, BA = bank address.
6. NOP commands are shown for ease of illustration; other commands may be valid at these
7.
8.
9. Subsequent rising DQS signals must align to the clock within
t CK
times.
t
t
DSH is applicable during
DSS is applicable during
t RCD
t RAS
NOP 6
T2
t CH
t CL
WRITE 2
Bank x
Col n
3
T3
WL ± t DQSS (NOM)
WL = 2
t
t
DQSS (MAX) and is referenced from CK T6 or T7.
DQSS (MIN) and is referenced from CK T5 or T6.
NOP 6
T4
56
t WPRE
Micron Technology, Inc., reserves the right to change products or specifications without notice.
NOP 6
T5
DI
n
T5n
512Mb: x4, x8, x16 DDR2 SDRAM
t DQSL t DQSH t WPST
NOP 6
9
T6
T6n
DON’T CARE
t
NOP 6
DQSS.
T7
©2004 Micron Technology, Inc. All rights reserved.
t WR
NOP 6
TRANSITIONING DATA
T8
ALL BANKS
ONE BANK
WRITEs
Bank x 4
PRE
T9
t RP