MT47H64M8CB-5E:B Micron Technology Inc, MT47H64M8CB-5E:B Datasheet - Page 68

• Manufacturer Part Number: MT47H64M8CB-5E:B
• Description: IC DDR2 SDRAM 512MBIT 5NS 60FBGA
• Manufacturer: Micron Technology Inc

Specifications of MT47H64M8CB-5E:B

• Format - Memory: RAM
• Memory Type: DDR2 SDRAM
• Memory Size: 512M (64M x 8)
• Speed: 5ns
• Interface: Parallel
• Voltage - Supply: 1.7 V ~ 1.9 V
• Operating Temperature: 0°C ~ 85°C
• Package / Case: 60-FBGA
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Figure 48:
Figure 49:
PDF: 09005aef8117c18e, Source: 09005aef8211b2e6
512MbDDR2_2.fm - Rev. K 8/06 EN
COMMAND
COMMAND
DQS, DQS#
DQS, DQS#
ADDRESS
ADDRESS
CKE
CKE
CK#
A10
CK#
A10
DQ
DQ
CK
CK
VALID
WRITE
WRITE
VALID
TRANSITIONING DATA
T0
T0
WRITE to Power-Down or Self-Refresh Entry
WRITE with Auto Precharge to Power-Down or Self Refresh Entry
Notes:
Notes:
NOP
NOP
T1
T1
WL = 3
WL = 3
1. Power-down or self refresh entry may occur after the WRITE burst completes.
1. WR is programmed through MR[9, 10, 11] and represents (
2. Internal PRECHARGE occurs at Ta0 when WR has completed; power-down entry may occur
to next integer
1 x
t
DON’T CARE
CK later at Ta1, prior to
NOP
NOP
T2
T2
t
D
CK.
NOP
D
T3
NOP
OUT
T3
OUT
Indicates a break in
time scale
D
D
OUT
OUT
VALID
D
t
68
VALID
D
RP being satisfied.
T4
OUT
T4
OUT
D
D
OUT
OUT
Micron Technology, Inc., reserves the right to change products or specifications without notice.
TRANSITIONING DATA
VALID
VALID
T5
T5
512Mb: x4, x8, x16 DDR2 SDRAM
WR 1
VALID 2
Ta0
VALID
t WTR
T6
t
WR [MIN] ns /
or self refresh
Power-down
or self refresh
Power-down
©2004 Micron Technology, Inc. All rights reserved.
entry
Power-Down Mode
entry 1
NOP
Ta1
NOP 1
T7
t
CK) rounded up
t CKE (MIN)
t CKE (MIN)
Ta2
T8
DON’T CARE