MT47H64M8CB-5E:B Micron Technology Inc, MT47H64M8CB-5E:B Datasheet - Page 124

• Manufacturer Part Number: MT47H64M8CB-5E:B
• Description: IC DDR2 SDRAM 512MBIT 5NS 60FBGA
• Manufacturer: Micron Technology Inc

Specifications of MT47H64M8CB-5E:B

• Format - Memory: RAM
• Memory Type: DDR2 SDRAM
• Memory Size: 512M (64M x 8)
• Speed: 5ns
• Interface: Parallel
• Voltage - Supply: 1.7 V ~ 1.9 V
• Operating Temperature: 0°C ~ 85°C
• Package / Case: 60-FBGA
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Table 49:
PDF: 09005aef8117c18e, Source: 09005aef8211b2e6
512MbDDR2_2.fm - Rev. K 8/06 EN
Address and control input pulse width for
each input
Address and control input setup time
Address and control input hold time
Address and control input setup time
Address and control input hold time
CAS# to CAS# command delay
ACTIVE-to-ACTIVE (same bank) command
ACTIVE bank a to ACTIVE bank b
command
ACTIVE-to-READ or WRITE delay
4-bank activate period
4-bank activate period
ACTIVE-to-PRECHARGE command
Internal READ-to-PRECHARGE command
delay
Write recovery time
Auto precharge write recovery +
precharge time
Internal WRITE-to-READ command delay
PRECHARGE command period
PRECHARGE ALL command period
LOAD MODE command cycle time
CKE low to CK, CK# uncertainty
REFRESH-to-ACTIVE or REFRESH-to-
REFRESH command interval
Average periodic refresh interval
Average periodic refresh interval
(industrial)
Exit self refresh to non-READ command
Exit self refresh to READ command
Exit self refresh timing reference
AC Operating Conditions for -25E and -25 Speeds (Sheet 3 of 4)
Notes: 1–5; notes appear on page 126; V
Parameter
AC Characteristics
(1K page)
(2K page)
Symbol
(x4, x8)
t
t
t
t
DELAY
t
t
t
t
REFI
t
t
t
t
(x16)
t
t
t
XSNR
XSRD
t
t
t
t
t
t
MRD
t
FAW
FAW
WTR
t
ISXR
IPW
t
t
CCD
t
RRD
RRD
RCD
RAS
DAL
RPA
REFI
RTP
t
RFC
WR
IH
IH
IS
IS
RC
RP
a
b
a
b
IT
DD
Q = +1.8V ±0.1V, V
(MIN) + 10
t
t
WR +
RP +
124
Min
t
12.5
37.5
12.5
375
375
175
250
105
200
0.6
7.5
7.5
7.5
RFC
55
10
50
45
15
t
2
2
IS
t
IS +
t
t
CK
RP
-25E
t
CK +
Micron Technology, Inc., reserves the right to change products or specifications without notice.
70,000
70,000
t
Max
IH
7.8
3.9
DD
512Mb: x4, x8, x16 DDR2 SDRAM
= +1.8V ±0.1V
(MIN) + 10
t
t
AC Operating Specifications
WR +
RP +
t
Min
37.5
375
375
175
250
105
200
0.6
7.5
7.5
RFC
55
10
15
50
45
15
15
10
t
2
2
IS
t
IS +
t
t
CK
RP
-25
t
CK +
©2004 Micron Technology, Inc. All rights reserved.
70,000
70,000
t
Max
IH
7.8
3.9
Units Notes
t
t
t
t
CK
ps
ps
ps
ps
CK
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
CK
ns
ns
µs
µs
ns
CK
ps
18, 31,
21, 25,
31, 37
25, 37
25, 37
28, 37
28, 37
25, 37
25, 37
29, 37
14, 37
14, 37
14, 37
6, 27
37
19
19
19
19
37
37
37
37
20
29
37
26
37