MT47H64M8CB-5E:B Micron Technology Inc, MT47H64M8CB-5E:B Datasheet - Page 55

• Manufacturer Part Number: MT47H64M8CB-5E:B
• Description: IC DDR2 SDRAM 512MBIT 5NS 60FBGA
• Manufacturer: Micron Technology Inc

Specifications of MT47H64M8CB-5E:B

• Format - Memory: RAM
• Memory Type: DDR2 SDRAM
• Memory Size: 512M (64M x 8)
• Speed: 5ns
• Interface: Parallel
• Voltage - Supply: 1.7 V ~ 1.9 V
• Operating Temperature: 0°C ~ 85°C
• Package / Case: 60-FBGA
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Figure 37:
PDF: 09005aef8117c18e, Source: 09005aef8211b2e6
512MbDDR2_2.fm - Rev. K 8/06 EN
COMMAND
ADDRESS
t DQSS (NOM)
t DQSS (MIN)
t DQSS (MAX)
DQS#
DQS#
DQS#
DQS
DQS
DQS
CK#
DM
DM
DM
DQ
DQ
DQ
CK
WRITE-to-PRECHARGE
Bank a,
WRITE
Col b
T0
Notes:
WL - t DQSS
WL + t DQSS
WL + t DQSS
1. DI b = data-in for column b.
2. Three subsequent elements of data-in are applied in the programmed order following DI b.
3. BL = 4, CL = 3, AL = 0; thus, WL = 2.
4.
5. The PRECHARGE and WRITE commands are to the same bank. However, the PRECHARGE
6. A10 is LOW with the WRITE command (auto precharge is disabled).
7. PRE = PRECHARGE command.
8. Subsequent rising DQS signals must align to the clock within
NOP
T1
t
and WRITE commands may be to different banks, in which case
PRECHARGE command could be applied earlier.
WR is referenced from the first positive CK edge after the last data-in pair.
DI
b
NOP
T2
DI
b
DI
b
T2n
8
NOP
T3
8
55
8
T3n
Micron Technology, Inc., reserves the right to change products or specifications without notice.
NOP
T4
DON’T CARE
512Mb: x4, x8, x16 DDR2 SDRAM
T5
NOP
TRANSITIONING DATA
t
DQSS.
t WR
t
©2004 Micron Technology, Inc. All rights reserved.
WR is not required and the
T6
NOP
(a or all)
PRE 7
Bank,
T7
WRITEs
t RP