MT47H64M8CB-5E:B Micron Technology Inc, MT47H64M8CB-5E:B Datasheet - Page 82

• Manufacturer Part Number: MT47H64M8CB-5E:B
• Description: IC DDR2 SDRAM 512MBIT 5NS 60FBGA
• Manufacturer: Micron Technology Inc

Specifications of MT47H64M8CB-5E:B

• Format - Memory: RAM
• Memory Type: DDR2 SDRAM
• Memory Size: 512M (64M x 8)
• Speed: 5ns
• Interface: Parallel
• Voltage - Supply: 1.7 V ~ 1.9 V
• Operating Temperature: 0°C ~ 85°C
• Package / Case: 60-FBGA
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Absolute Maximum Ratings
Table 17:
Temperature and Thermal Impedance
PDF: 09005aef8117c18e, Source: 09005aef8211b2e6
512MbDDR2_2.fm - Rev. K 8/06 EN
Parameter
V
V
V
Voltage on any ball relative to V
Input leakage current; any input 0V ≤ V
not under test = 0V)
Output leakage current; 0V ≤ V
V
REF
DD
DD
DD
Q supply voltage relative to V
L supply voltage relative to V
supply voltage relative to V
leakage current; V
Absolute Maximum DC Ratings
Notes:
REF
= Valid V
Stresses greater than those listed may cause permanent damage to the device. This is a
stress rating only, and functional operation of the device at these or any other conditions
above those indicated in the operational sections of this specification is not implied.
Exposure to absolute maximum rating conditions for extended periods may affect reli-
ability.
1. V
2. V
3. Voltage on any I/O may not exceed voltage on V
It is imperative that the DDR2 SDRAM device’s temperature specifications, shown in
Table 18 on page 83, be maintained in order to ensure the junction temperature is in the
proper operating range to meet data sheet specifications. An important step in main-
taining the proper junction temperature is using the device’s thermal impedances
correctly. The thermal impedances are listed in Table 19 on page 83 for the applicable
and available die revision and packages.
Incorrectly using thermal impedances can produce significant errors. Read Micron
Technical Note TN-00-08, “Thermal Applications,” prior to using the thermal imped-
ances listed below. For designs that are expected to last several years and require the
flexibility to use several designs, consider using final target theta values, rather than
existing values, to account for larger thermal impedances.
The DDR2 SDRAM device’s safe junction temperature range can be maintained when
the T
ature is too high, use of forced air and/or heat sinks may be required in order to satisfy
the case temperature specifications.
OUT
SS
SS
DD
REF
SS
SS
C
≤ V
L
Q
, V
REF
specification is not exceeded. In applications where the device’s ambient temper-
≤ 0.6 x V
DD
DD
level
IN
Q; DQ and ODT disabled
Q, and V
≤ V
DD
DD
Q; however, V
; all other balls
DD
L must be within 300mV of each other at all times.
82
REF
may be ≥ V
V
Symbol
IN
V
V
V
I
DD
, V
I
V
DD
OZ
DD
I
REF
I
Micron Technology, Inc., reserves the right to change products or specifications without notice.
OUT
Q
L
DD
512Mb: x4, x8, x16 DDR2 SDRAM
Q provided that V
Min
–1.0
–0.5
–0.5
–0.5
DD
–5
–5
–2
Q.
Absolute Maximum Ratings
Max
2.3
2.3
2.3
2.3
5
5
2
©2004 Micron Technology, Inc. All rights reserved.
REF
≤ 300mV.
Units
µA
µA
µA
V
V
V
V
Notes
1, 2
1
1
3