MT47H64M8CB-5E:B Micron Technology Inc, MT47H64M8CB-5E:B Datasheet - Page 59

• Manufacturer Part Number: MT47H64M8CB-5E:B
• Description: IC DDR2 SDRAM 512MBIT 5NS 60FBGA
• Manufacturer: Micron Technology Inc

Specifications of MT47H64M8CB-5E:B

• Format - Memory: RAM
• Memory Type: DDR2 SDRAM
• Memory Size: 512M (64M x 8)
• Speed: 5ns
• Interface: Parallel
• Voltage - Supply: 1.7 V ~ 1.9 V
• Operating Temperature: 0°C ~ 85°C
• Package / Case: 60-FBGA
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Figure 41:
PDF: 09005aef8117c18e, Source: 09005aef8211b2e6
512MbDDR2_2.fm - Rev. K 8/06 EN
Data Input Timing
Notes:
DQS#
1.
2.
3. WRITE command issued at T0.
4. For x16, LDQS controls the lower byte and UDQS controls the upper byte.
5. WRITE command with WL = 2 (CL = 3, AL = 0) issued at T0.
6. Subsequent rising DQS signals must align to the clock within
DQS
CK#
DM
DQ
CK
t
t
DSH (MIN) generally occurs during
DSS (MIN) generally occurs during
T0
WL -
t
DQSS (NOM)
T1
59
T1n
t WPRE
t
t
DQSS (MAX).
DQSS (MIN).
Micron Technology, Inc., reserves the right to change products or specifications without notice.
T2
DI
t DSH 1
TRANSITIONING DATA
T2n
512Mb: x4, x8, x16 DDR2 SDRAM
t DQSL
t DSS 2
T3
6
t DQSH t WPST
t DSH 1
T3n
t
DQSS.
t DSS 2
©2004 Micron Technology, Inc. All rights reserved.
T4
DON’T CARE
WRITEs