MT47H64M8CB-5E:B Micron Technology Inc, MT47H64M8CB-5E:B Datasheet - Page 100

• Manufacturer Part Number: MT47H64M8CB-5E:B
• Description: IC DDR2 SDRAM 512MBIT 5NS 60FBGA
• Manufacturer: Micron Technology Inc

Specifications of MT47H64M8CB-5E:B

• Format - Memory: RAM
• Memory Type: DDR2 SDRAM
• Memory Size: 512M (64M x 8)
• Speed: 5ns
• Interface: Parallel
• Voltage - Supply: 1.7 V ~ 1.9 V
• Operating Temperature: 0°C ~ 85°C
• Package / Case: 60-FBGA
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Figure 73:
PDF: 09005aef8117c18e, Source: 09005aef8211b2e6
512MbDDR2_2.fm - Rev. K 8/06 EN
Nominal Slew Rate for
Notes:
V
V
1. DQS, DQS# signals must be monotonic between V
V
V
IL
IL
IH
IH
(
(
DC
AC
(
(
AC
DC
V
) MAX
) MAX
DQS#
REF
) MIN
) MIN
V
DQS
DD
(
V
DC
Q
SS
1
1
)
DC to V
region
Hold slew rate
rising signal
t
DH
REF
=
V
REF
(
t IS
Nominal
slew rate
DC
100
) - V
ΔTR
IL
(
DC
) MAX
t IH
Micron Technology, Inc., reserves the right to change products or specifications without notice.
512Mb: x4, x8, x16 DDR2 SDRAM
ΔTR
IL
Hold slew rate
falling signal
(
DC
) MAX and V
Input Slew Rate Derating
t IS
Nominal
slew rate
=
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DC to V
region
V
IH
IH
(
DC
(
) MIN - V
DC
REF
t IH
ΔTF
) MIN.
REF
ΔTF
(
DC
)