h8s-2635 Renesas Electronics Corporation., h8s-2635 Datasheet - Page 960

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h8s-2635

Manufacturer Part Number
h8s-2635
Description
Renesas 16-bit Single-chip Microcomputer H8s Family/h8s/2600 Series
Manufacturer
Renesas Electronics Corporation.
Datasheet
Section 21C ROM (H8S/2635 Group)
If erasing multiple blocks, set a single bit in EBR1/EBR2 for the next block to be erased, and
repeat the erase/erase-verify sequence as before.
Rev. 6.00 Feb 22, 2005 page 900 of 1484
REJ09B0103-0600
Notes: 1. Prewriting (setting erase block data to all 0s) is not necessary.
2. Verify data is read in 16-bit (word) units.
3. Make only a single-bit specification in the erase block registers (EBR1 and EBR2). Two or more bits must not be set simultaneously.
4. Erasing is performed in block units. To erase multiple blocks, each block must be erased in turn.
5. The wait times and the value of N are shown in section 24.2.7, 24.3.7, and 24.4.7, Flash Memory Characteristics.
Increment
address
Figure 21C-13 Erase/Erase-Verify Flowchart
No
Set block start address as verify address
H'FF dummy write to verify address
Clear ESU bit in FLMCR1
Clear SWE bit in FLMCR1
Set SWE bit in FLMCR1
Set ESU bit in FLMCR1
Clear EV bit in FLMCR1
Clear E bit in FLMCR1
Set EV bit in FLMCR1
Last address of block?
Set E bit in FLMCR1
Set EBR1 or EBR2
Verify data = all 1s?
Read verify data
Wait (t
Wait (t
End of erasing
Wait (t
Wait (t
Wait (t
Disable WDT
Wait (t
Wait (t
Enable WDT
Wait (t
Wait (t
n = 1
Start
sswe
cswe
sesu
cesu
sevr
sev
cev)
se
ce
Yes
Yes
) ms
) µs
) µs
) µs
) µs
) µs
) µs
) µs
µs
*1
No
*5
*3 *4
*5
Start of erase
*5
Erase halted
*5
*5
*5
*5
*2
*5
*5
Perform erasing in block units.
Clear SWE bit in FLMCR1
Clear EV bit in FLMCR1
Wait (t
Wait (t
Erase failure
n ≥ (N)?
cswe
cev
Yes
) µs
) µs
*5
No
n ← n + 1
*5
*5

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